High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system  

作　　者：JINLAI CUI JUN ZHENG YUPENG ZHU XIANGQUAN LIU YIYANG WU QINXING HUANG YAZHOU YANG ZHIPENG LIU ZHI LIU YUHUA ZUO BUWEN CHENG 

机构地区：[1]Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Photonics Research》2024年第4期767-773,共7页光子学研究（英文版）

基　　金：National Key Research and Development Program of China (2020YFB220613);National Natural Science Foundation of China (62090054, 62250010,62274160);Strategic Leading Science and Technology Project,CAS (XDB43020100);Youth Innovation Promotion Association Chinese Academy of Sciences (2021111)。

摘　　要：Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber.In this study,GeSn resonance cavity enhanced(RCE)photodetectors(PDs)with an active layer Sn component of 9%–10.8%were designed and fabricated on an SOI substrate.The GeSn RCE PDs present a responsivity of 0.49 A/W at 2μm and a 3-dB bandwidth of approximately 40 GHz at 2μm.Consequently,Si-based 2μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector.This work demonstrates the considerable potential of the Si-based 2μm band photonics in future high-speed and high-capacity optical communication.

关 键 词：RESONANCE system APPROXIMATE 

分 类 号：TN929.1[电子电信—通信与信息系统] TN36[电子电信—信息与通信工程]