6.X nm下一代极紫外多层膜技术研究进展  

Research Progress of Beyond Extreme Ultraviolet Multilayers at 6.X nm

作　　者：李笑然 唐何涛 赵娇玲[2] 李丰华 Li Xiaoran;Tang Hetao;Zhao Jiaoling;Li Fenghua(School of Microelectronics,Shanghai University,Shanghai 200072,China;Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]上海大学微电子学院,上海200072 [2]中国科学院上海光学精密机械研究所薄膜光学实验室,上海201800

出　　处：《中国激光》2024年第7期151-163,共13页Chinese Journal of Lasers

基　　金：国家自然科学基金(12275346);中国科学院青促会会员(2020253)。

摘　　要：集成电路的生产主要依靠光刻技术为主的工艺体系,采用波长为13.5 nm光源的极紫外光刻是当前最先进的商用规模量产光刻技术,为集成电路的发展带来前所未有的进步。根据瑞利判据,为进一步提高分辨率,以波长6.X nm为光源的下一代“超越极紫外”光刻成为研究热点。多层膜反射镜是极紫外光刻机光学系统中的关键器件,其反射率和寿命决定光刻机的曝光效率与成像质量。综述了6.X nm多层膜的研究进展,对近年来6.X nm波段的极紫外光源以及多层膜的设计、制备和表征等方面进行了介绍和分析。重点阐述了6.X nm多层膜的界面优化方法,并讨论了多层膜在工程应用中的老化和性能衰减等问题,对面向未来商业应用的方向做出了展望。旨在为我国从事先进光刻等相关研究工作的学者、工程师等提供重要参考。Significance The production of integrated circuits relies primarily on lithography.Extreme Ultraviolet(EUV)lithography employing a light source at 13.5 nm is currently the most advanced lithography technology for high-volume mass production,which has led to unprecedented progress in the development of integrated circuits(IC).The constant demand for IC chips with higher computing power has increased with the technological development of artificial intelligence in recent years.This requires further improvement in the lithographic resolution for the manufacture of smaller transistors on chips.Beyond extreme ultraviolet lithography(BEUV)at a wavelength of 6.X nm has become a research hotspot according to the Rayleigh criterion.Light-source technology is indispensable to EUV lithography.To meet the requirements for mass production,an EUV light source must possess key performance characteristics,such as a stable and high-level output power,high energy conversion efficiency,minimum contamination level,and low maintenance cost.Currently,the predominant methods for the emission of BEUV light at a wavelength of 6.X nm include synchrotron radiation/free electron lasers(FEL),laser-produced plasma(LPP),and laser-induced discharge plasma(LDP).The mainstream approach is LPP technology,which utilizes Tb or Gb targets.Meanwhile,FEL exhibit potential as feasible BEUV light sources owing to their high power and efficiency,especially since the recent development of miniaturized X-ray free electron lasers(XFEL).In particular,the reflective multilayer mirror is a crucial component of the optical system of EUV/BEUV lithography,which determines the exposure efficiency and imaging quality during lithography.To achieve a high reflectivity at the designated wavelength,the multilayer structure generally comprises alternating nanolayers of two materials with high optical contrast and low extinction coefficient.Notably,for a wavelength of 6.X nm,the period thickness of the multilayers is only approximately 3 nm,and the required number of laye

关 键 词：先进光刻 超越极紫外 多层膜 反射率 界面工程 

分 类 号：O484[理学—固体物理]