一维/二维半导体器件肖特基势垒高度的调整方法  

Adjustment methods of Schottky barrier height in one-and two-dimensional semiconductor devices

作　　者：孟建平 李正国 李舟 Jianping Meng;Chengkuo Lee;Zhou Li(Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China;School of Nanoscience and Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117583,Singapore;Center for Intelligent Sensors and MEMS,National University of Singapore,Singapore 117608,Singapore)

机构地区：[1]Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China [2]School of Nanoscience and Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117583,Singapore [4]Center for Intelligent Sensors and MEMS,National University of Singapore,Singapore 117608,Singapore

出　　处：《Science Bulletin》2024年第9期1342-1352,共11页科学通报（英文版）

基　　金：supported by Youth Innovation Promotion Association CAS (2023175);the National Natural Science Foundation of China (T2125003);the Fundamental Research Funds for the Central Universities。

摘　　要：The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal–semiconductor interface.Controlling or adjusting Schottky barrier height(SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nanosemiconductor devices. These methods encompass the work function of the metals, interface gap states,surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.

关 键 词：Schottky contact Schottky barrier height Adjustment methods One-and two-dimensional semiconductor 

分 类 号：TN303[电子电信—物理电子学]