与硅基技术兼容的二维过渡金属硫族化合物电子器件  

Two-dimensional transition metal dichalcogenide electronic devices compatible with silicon-based technology

作　　者：耿宇 陈超[1,3,4] 陈匡磊 张先坤 张铮[1,2,4,6] 张跃 Yu Geng;Chao Chen;Kuanglei Chen;Xiankun Zhang;Zheng Zhang;Yue Zhang(Academy for Advanced Interdisciplinary Science and Technology,University of Science and Technology Beijing,Beijing 100083,China;Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education,Beijing 100083,China;Beijing Key Laboratory for Advanced Energy Materials and Technologies,Beijing 100083,China;Beijing Advanced Innovation Center for Materials Genome Engineering,Beijing 100083,China;State Key Laboratory for Advanced Metals and Materials,Beijing 100083,China;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学前沿交叉科学技术研究院,北京100083 [2]后摩尔时代芯片关键新材料与器件教育部重点实验室,北京100083 [3]新能源材料与技术北京市重点实验室,北京100083 [4]北京材料基因工程高精尖创新中心,北京100083 [5]新金属材料国家重点实验室,北京100083 [6]北京科技大学材料科学与工程学院,北京100083

出　　处：《科学通报》2024年第14期1906-1922,共17页Chinese Science Bulletin

基　　金：国家自然科学基金(51991340,51991342,52225206,92163205,52188101,52142204);国家重点研发计划(2022YFA1203800)资助。

摘　　要：作为现代信息社会的物理基石,以硅基材料为核心的集成电路极大推动了人类现代文明的进程.但是,随着晶体管特征尺寸微缩逐渐接近物理极限,传统硅基材料出现了电学性能衰退、异质界面失稳等挑战,导致集成电路数据处理能力提升难、功耗急剧增加等问题产生.超薄二维过渡金属硫族化合物(transition metal dichalcogenides,TMDCs)具有表面平整无悬挂键、电输运性能优异、静电控制力强、化学性质稳定等优势,可有效解决上述问题,被认为是后摩尔时代集成电路的最具潜力候选材料之一.目前,二维TMDCs集成电路研究在多个关键领域均取得了突破性成果,但距离产业化应用仍需要克服一些挑战.本文着重介绍了二维TMDCs材料与电子器件在集成电路应用的各方面优势,系统阐明了二维TMDCs集成电路在材料控制生长、范德华界面优化以及器件设计构筑等方面的关键科学问题,提出了相应解决办法和应对措施,分析了二维TMDCs集成电路产业化进程中的综合性挑战,明确了“与硅基技术兼容”二维TMDCs集成电路发展路线的优势、可行性与突破方向.For over half a century,Moore’s Law has successfully promoted the deep integration of semiconductor science,industrialtechnology,and social capital,stimulating the rapid development of the integrated circuit industry and accelerating theprogress of human beings from the Information Age to the Artificial Intelligence Age.However,with the advent of theminiature limit of transistor size,integrated circuits face great challenges in achieving the increasing demands for highintegration and high data processing capabilities through the strategy of directly reducing channel dimensions.As thedimensions of transistors approach their physical limits,traditional silicon-based channel materials(such as silicon andgermanium,etc.)have experienced challenges such as declining electrical performance and rapidly increasing leakagecurrents,leading to difficulties in improving the data processing capabilities of integrated circuits and a sharp increase inpower consumption.As a result,the integrated circuit industry has entered the post-Moore’s Law era and urgently needs tofind new semiconductor materials to further advance the semiconductor industry.Two-dimensional(2D)transition metal dichalcogenides(TMDCs)materials have excellent physicochemical properties,attracting widespread attention from researchers in the integrated circuit field.Firstly,2D-TMDCs materials have an ultrathinlayered structure similar to graphene,with a smooth surface and no dangling bonds,which can reduce scattering in thetransport of charge carriers and effectively suppress the short-channel effects caused by transistor size miniaturization.Secondly,due to their unsuspended bond surfaces,2D-TMDCs can break through the traditional material lattice-matchinglimitations and form van der Waals heterostructures through stacking,which is advantageous for addressing thechallenging issue of performance degradation caused by lattice mismatch in conventional heterostructures.In addition,most 2D-TMDCs semiconductor materials have a moderate band gap of 1–2 eV,which

关 键 词：集成电路 二维过渡金属硫族化合物 电子器件 与硅基技术兼容 

分 类 号：TN40[电子电信—微电子学与固体电子学]