通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料  

Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study

作　　者：屈恒泽 张胜利 曹江 吴振华 柴扬 李卫胜 李连忠 任文才 王欣然 曾海波 Hengze Qu;Shengli Zhang;Jiang Cao;Zhenhua Wu;Yang Chai;Weisheng Li;Lain-Jong Li;Wencai Ren;Xinran Wang;Haibo Zeng(MIIT Key Laboratory of Advanced Display Materials and Devices,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China;National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China;Department of Mechanical Engineering,The University of Hong Kong,Hong Kong 999077,China;Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Integrated Circuits,Nanjing University,Suzhou 215163,China;Suzhou Laboratory,Suzhou 215009,China)

机构地区：[1]MIIT Key Laboratory of Advanced Display Materials and Devices,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [2]School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [3]Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China [4]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China [5]National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China [6]Department of Mechanical Engineering,The University of Hong Kong,Hong Kong 999077,China [7]Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [8]School of Integrated Circuits,Nanjing University,Suzhou 215163,China [9]Suzhou Laboratory,Suzhou 215009,China

出　　处：《Science Bulletin》2024年第10期1427-1436,共10页科学通报（英文版）

基　　金：supported by the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX22_0428);the Training Program of the Major Research Plan of the National Natural Science Foundation of China(91964103);the Natural Science Foundation of Jiangsu Province(BK20180071);the Fundamental Research Funds for the Central Universities(30919011109);sponsored by Qing Lan Project of Jiangsu Province,and the Six Talent Peaks Project of Jiangsu Province(XCL-035);Research Grant Council of Hong Kong(CRS_PolyU502/22).

摘　　要：Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 nanometers.However,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room temperature.Herein,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in MOSFETs.Through high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport potential.This guides us to screen 192 candidates from the 2D material database comprising 1608 systems.Additionally,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 V.This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关 键 词：2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations 

分 类 号：TN386[电子电信—物理电子学]