垂直排列的六方氮化硼基忆阻器中的突触可塑性  

Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor

作　　者：张海忠 巨鑫 江海涛 杨丹 魏榕山 胡炜 卢孝强 朱敏敏 Haizhong Zhang;Xin Ju;Haitao Jiang;Dan Yang;Rongshan Wei;Wei Hu;Xiaoqiang Lu;Minmin Zhu(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350116,China;Fuzhou University-Jinjiang Joint Institute of Microelectronics,School of Advanced Manufacturing,Jinjiang Science and Education Park,Fuzhou University,Jinjiang 362200,China;Institute of Materials Research and Engineering,Agency for Science,Technology and Research,Singapore 138634,Singapore)

机构地区：[1]College of Physics and Information Engineering,Fuzhou University,Fuzhou 350116,China [2]Fuzhou University-Jinjiang Joint Institute of Microelectronics,School of Advanced Manufacturing,Jinjiang Science and Education Park,Fuzhou University,Jinjiang 362200,China [3]Institute of Materials Research and Engineering,Agency for Science,Technology and Research,Singapore 138634,Singapore

出　　处：《Science China Materials》2024年第6期1907-1914,共8页中国科学（材料科学）（英文版）

基　　金：supported by the Science and Technology Major Project of Fujian Province,China (2022HZ027006);Fujian Provincial Science and Technology Planning Project (2022I0006);Quanzhou Municipal Science and Technology Major Project,China (2022GZ7);the National Natural Science Foundation of China (62274036)。

摘　　要：下一代计算系统需要实现每秒1018次浮点运算以解决感知终端数据呈指数增长的问题,这是由人工智能和物联网的进步驱动的.即使超级计算机具备执行这些操作的能力,但当电子突触阵列达到与人类神经网络相当规模时,管理热耗散就成为一个重要挑战.解决电子设备中热点问题的潜在方案之一是使用垂直排列的六方氮化硼(h-BN),这种材料以其高导热性而闻名.在本研究中,我们使用高功率脉冲磁控溅射技术开发了纹理化的h-BN薄膜.定向的h-BN薄膜的热导率约为随机定向对应物的354%.通过制备基于纹理化h-BN薄膜的电子突触,我们展示了该器件中的各种生物突触可塑性.我们的研究结果表明,通过方向工程,可以有效使h-BN成为一种适用的自散热层,从而为未来可穿戴记忆设备、太阳能电池和神经形态器件铺平道路.The next-generation computing system is re-quired to perform 1018 floating point operations per second to address the exponential growth of data from sensory term-inals,driven by advancements in artificial intelligence and the Internet of Things.Even if a supercomputer possesses the capability to execute these operations,managing heat dis-sipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network.One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride(h-BN)known for its high thermal conductivity.In this study,we have developed textured h-BN films using the high power impulse magnetron sputtering technique.The thermal conductivity of the oriented h-BN film is approximately 354%higher than that of the randomly or-iented counterpart.By fabricating electronic synapses based on the textured h-BN thin film,we demonstrate various bio-synaptic plasticity in this device.Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer,thereby paving the way for future wearable memory devices,solar cells,and neuromorphic devices.

关 键 词：boron nitride vertically-aligned high thermal con-ductivity low-power memory neuromorphic computing 

分 类 号：TN60[电子电信—电路与系统]