Enhanced thermoelectric performance enabled by compositing ZrO_(2)in n-type SiGe alloy with low thermal conductivity  

作　　者：Meng-Fei Wang Hua-Jun Lai Ji-Sheng Liang Jun-Liang Chen Wang-Yang Ding Qi Zhou Ying Peng Cheng-Yan Liu Lei Miao 

机构地区：[1]Guangxi Key Laboratory for Relativity Astrophysics,State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures,School of Physical Science and Technology,Guangxi University,Nanning,530004,China [2]Guangxi Academy of Sciences,Nanning,530007,China [3]Key Laboratory of Information Material,Engineering Research Center of Electronic Information Materials and Devices,Guilin University of Electronic Technology,Ministry of Education,Guilin,541004,China [4]Guangxi Key Laboratory of Precision Navigation Technology and Application,School of Information and Communication,Guilin University of Electronic Technology,Guilin,541004,China

出　　处：《Rare Metals》2024年第3期1167-1176,共10页稀有金属（英文版）

基　　金：financially supported by the National Key Research and Development Program of China(Nos.2022YFE0119100 and 2017YFE0198000);the National Natural Science Foundation of China(Nos.U21A2054,52273285,52061009 and 52262032);Guangxi Science and Technology Planning Project(No.AD21220056)。

摘　　要：SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long lifespan.However,the intrinsically high thermal conductivity of Si-based materials also results in poor TE properties.In this investigation,a zirconia(ZrO_(2))composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE performance.After mechanical alloying and spark plasma sintering(SPS)processes,the ZrO_(2)induced the formation of nanopores in the SiGe matrix via phosphorus adsorption.Moreover,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m^(-1)·K^(-1)at 873 K.Additionally,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity,The power factor didn't deteriorate significantly,either,as its maximum of~3.43 mW·m^(-1-)K^(-2)was achieved at 873 K with(Si_(0.8)Ge_(0.2))_(0.097)P_(0.03)(ZrO_(2))_(0.003).In short,a peak figure of merit(ZT)of~1.27 at 873 K and an average ZT~0.7 from 323 to 873 K were obtained.This study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO_(2),illustrating a novel strategy to optimize the TE properties of bulk materials.

关 键 词：THERMOELECTRIC SiGe alloy ZrO2 composting P element adsorption NANOPORES 

分 类 号：TB34[一般工业技术—材料科学与工程]