基于SiGe材料的热电器件输出性能仿真计算分析  

Simulation and Analysis of Output Performance of Thermoelectric Devices Based on SiGe Material

作　　者：赵明[1,2] 孙陆军 黄望哩[1] 肖尊奇[1] 姜志忠 Zhao Ming;Sun Lujun;Huang Wangli;Xiao Zunqi;Jiang Zhizhong(Institute of Nuclear Energy Safety Technology,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China;Science Island Branch,Graduate School of University of Science and Technology,Hefei 230026,China)

机构地区：[1]中国科学院合肥物质科学研究院核能安全技术研究所,安徽合肥230031 [2]中国科学技术大学研究生院科学岛分院,安徽合肥230026

出　　处：《稀有金属》2024年第3期378-387,共10页Chinese Journal of Rare Metals

基　　金：国家自然科学基金青年基金项目(2180051117)资助。

摘　　要：近年来,高温热电材料SiGe合金的制备工艺不断优化,其热电优值得到不断提升,作为温差发电器件材料在未来深空探测装备发电应用中展现出巨大的应用价值。基于目前研究发展的SiGe合金,在考虑接触电阻与热阻的基础上,利用ANSYS软件构建了平面型SiGe热电器件的仿真模型,分析电极厚度、电偶臂间距、电偶臂结构、热损和热端温度变化对器件输出性能影响。结果表明,器件开路电压和最大输出功率分别为0.315 V和0.56 W,与器件实验结果的误差均小于5%,模型具有较好的计算精度。减小热端SiMo电极厚度和电偶臂间距有效提高了器件输出性能,当器件电极厚度为1 mm,电偶臂间距为3 mm时,输出功率和热电效率达0.85 W和6.80%。结构设计发现,当n型和p型电偶臂横截面积比为0.90时,输出功率获得最大值;面积比为1.10时,转换效率获得最大值。器件与环境之间换热系数的增大有利于输出功率的提高,但转换效率大幅降低。器件输出性能变化相对热端温度变化具有滞后性,温度阶跃变化之后重新达到稳态所需要的时间为0.048 s,大于温度线性变化重新达到稳态所需要的时间0.022 s。研究结果可为后续器件的加工制备提供理论指导。Radioisotope thermoelectric generators(RTG)are widely used in the field of power supply for deep space exploration equipment,mainly using PbTe and SiGe as thermoelectric conversion materials.SiGe thermoelectric devices are favored by scientific researchers around the world due to their high mass specific power and service stability.In recent years,the preparation process of SiGe alloy has been continuously optimized,and its dimensionless figure of merit has been gradually improved.As a material for thermoelectric power generation devices,it has great application value in future space exploration tasks.At home and abroad,the main focus is on the performance control of thermoelectric materials,and the research on thermoelectric devices is relatively scarce.SiGe thermoelectric devices have been used in space exploration tasks for many times,but the actual conversion efficiency of thermoelectric devices is relatively low,about 7%.Improving the conversion efficiency of thermoelectric devices is currently an urgent problem to be solved.The structure design and performance optimization of the device are mainly based on numerical simulation.Based on the latest development of SiGe alloy,on the basis of considering contact resistance and thermal resistance,a simulation model of planar SiGe thermoelectric device was constructed using ANSYS software.The accuracy of the model was first verified,and then the effect of the electrode thickness,the thermolelectric leg spacing,the structure of the thermolelectric leg,the heat loss and the temperature change of the hot side on the output performance of the thermoelectric device were studied.The calculation results showed that the open circuit voltage and maximum output power simulation results of the thermoelectric device were 0.315 V and 0.56 W,respectively,and the experimental measurement results were 0.30 V and 0.54 W,respectively.The error was less than 5%.With the increase of electrode thickness from 1 to 9 mm,the output power of the device decreased from 0.85 to 0.27 W,and th

关 键 词：SIGE 热电器件 数值模拟 输出性能 

分 类 号：TN304.2[电子电信—物理电子学]