Bi_(2)(SnO_(3))3掺杂(Ba,Sr)TiO_(3)介电陶瓷介电性能的研究  

Study on the Dielectric Properties of(Ba,Sr)TiO_(3)Dielectric Ceramics Doped with Bi_(2)(SnO_(3))_(3)

作　　者：陈映义 陈磊[2] 彭道华 陈甲天 陈应和 黄新友[2] 牛继恩 CHEN Ying-yi;CHEN Lei;PENG Dao-hua;CHEN Jia-tian;CHEN Ying-he;HUANG Xin-you;NIU Ji-en(Fujian Ruisheng Electronic Technology Co.,Ltd,Zhangzhou 363500,china;School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]福建瑞升电子科技有限公司,漳州363500 [2]江苏大学材料科学与工程学院,镇江212013

出　　处：《中国陶瓷》2024年第6期49-54,共6页China Ceramics

摘　　要：通过传统固相法制备Bi_(2)(SnO_(3))_(3)(BSO)掺杂(Ba_(0.79)Sr_(0.21))TiO_(3)((Ba,Sr)TiO_(3),BST)陶瓷。采用XRD、SEM等研究了Bi_(2)(SnO_(3))_(3)(BSO)掺杂对BST陶瓷的物相和微观结构及介电的性能影响。实验结果表明:随着BSO掺杂量增加,BST基介电陶瓷的介电常数开始增大而后减小然后再增大随后再减小,陶瓷的介质损耗首先增大然后减小。当掺杂BSO的量是2 wt%的时候,BST基介电陶瓷具有较好的介电性能:介电常数是5430;介质损耗是0.0145,电容温度变化率是+20.64%,-45.58%。BSO掺杂的BST基介电陶瓷仍为钙钛矿结构。BSO的掺杂起到移峰和压峰的作用。A ceramic composite of Bi_(2)(SnO_(3))_(3)(BSO)doped with(Ba_(0.71)Sr_(0.29))TiO_(3)((Ba,Sr)TiO_(3)or BST)was prepared by the conventional solid-state method.The influence of the BSO doping amount on the dielectrical property,phase composition and microstructure of BST ceramics was investigated by XRD and SEM techniques.The experiment results showed that with increasing BSO doping concentration,the dielectric constant of BST-based ceramics initially increases,then decreases,followed by another increase before decreasing again,while the dielectric loss first increases and then decreases.When the BSO doping amount is 2.0 wt%,the BST-based dielectric ceramics possess favorable dielectric properties:a dielectric constant of 5430,a dielectric loss tangent of 0.0145,ΔC/C of+20.64%,and-45.58%.The BSO doped BST-based dielectric ceramics maintain a perovskite structure,and the BSO doping serves to shift and broaden the peaks.

关 键 词：钛酸锶钡 Bi_(2)(SnO_(3))_(3) 介电性能 掺杂 陶瓷 

分 类 号：TQ174.1[化学工程—陶瓷工业]