硫系玻璃基底减反射激光薄膜的设计及制备  

Design and Preparation of Anti-reflection Laser Films on Chalcogenide Glass Substrate

作　　者：王通 徐均琪[1] 李阳[1] 苏俊宏[1] 孙少斌 刘政 WANG Tong;XU Junqi;LI Yang;SU Junhong;SUN Shaobin;LIU Zheng(Shaanxi Province Key Laboratory of Thin Films Technology and Optical Test,Xi'an Technological University,Xi'an 710021,China;Joint Laboratory of Advanced Optical Manufacturing Technology,Xi'an Institute of Optics and Precision Mechanics of CAS,Xi'an 710119,China)

机构地区：[1]西安工业大学陕西省薄膜技术与光学检测重点实验室,西安710021 [2]中国科学院西安精密机械研究所先进光学制造技术联合实验室,西安710119

出　　处：《表面技术》2024年第12期252-259,共8页Surface Technology

摘　　要：目的随着红外技术的发展,硫系玻璃已作为红外光学元件得到一定使用,然而硫系玻璃在3~5μm波段的透射率不能满足使用要求,并且红外薄膜用于探测器中易遭受强激光的辐照而损伤。针对硫系玻璃(As_(40)Se_(60))基底镀制薄膜易脱落、透射率低,以及抗激光能力差等问题,设计并制备出在3~5μm波段具有良好透射率、在1064 nm处具有抗激光能力的薄膜。方法制备ZnSe、ZnS和YbF_(3)单层膜,测量其光学常数并进行膜系设计。优化设计出的红外多层薄膜结构为S|0.61H0.21L0.32M0.26L0.2M0.32L0.28M-0.17L0.35M0.28L0.13M0.61L|A,其中H代表ZnSe、M代表ZnS、L代表YbF_(3)、S代表硫系玻璃、A代表空气,数字为膜层的光学厚度,设计波长λ_(0)=4000 nm,薄膜的厚度为2055 nm,光谱性能为:在3~5μm波段双面镀膜时的平均透射率为95.67%,峰值透射率为99.11%,(1064±40)nm波段单面镀膜时的平均透射率为7.62%。在制备过程中,从膜基材料的热膨胀系数差异入手进行优化,工艺参数为:烘烤温度70℃,离子能量100 eV,离子束流20 mA,此参数下薄膜样品的残余应力为−30.0 MPa。结果所制备薄膜的附着性能符合要求,在3~5μm波段双面镀膜时平均透射率为95.38%,峰值透射率为99.07%,在(1064±40)nm范围内单面镀膜时的平均透射率为4.46%,在1064 nm处的激光损伤阈值为7.6 J/cm^(2)。结论在硫系玻璃基底制备薄膜时,从膜基材料的热膨胀系数差异入手,合理优化烘烤温度与离子参数,可以降低薄膜的残余应力,提高薄膜的附着性能。With the development of infrared technology,chalcogenide glass has been used as an infrared optical element to a certain extent,but the transmittance of chalcogenide glass in the 3-5μm band can not meet the requirements of use,and the infrared thin film for detectors is easily damaged by strong laser irradiation.In order to solve the problems that the optical film plated on chalcogenide glass(As_(40)Se_(60))substrate is easy to fall off,the transmittance is low,and the laser resistance is poor,the work aims to design and prepare a thin film with good transmittance in the 3-5μm band and laser resistance at 1064 nm.The optical constants of ZnSe,ZnS and YbF_(3) monolayer films were deposited and measured by ion beam-assisted thermal evaporation technology,and the ZnSe film materials were used as the transition layer between the film-groups to improve the film adhesion,and the film system design of infrared anti-reflection laser films was carried out by combining ZnS and YbF_(3) film materials.The optical constant measured by the above-mentioned single-layer film was input into the TFCalc film design software,and the infrared film with anti-reflection function in the 3-5μm band and high reflection function at 1064 nm was optimized on the As40Se60 glass substrate through TFCalc software.The film structure was S|0.61H0.21L0.32M0.26L-0.2M0.32L0.28M0.17L0.35M0.28L0.13M0.61L|A,of which H represented ZnSe material,M represented ZnS material,L represented YbF_(3) material,S represented chalcogenide glass and A represented air,and the design wavelength of the film system was 4000 nm.The thin film layer thickness was 2055 nm and the theoretical design spectral performance of the film was as follows:the average transmittance of double-sided coating samples in the range of 3-5μm was 95.67%,the peak transmittance was 99.11%,and the average transmittance of single-sided coating samples in the range of(1064±40)nm was 7.62%.The preparation of thin films was carried out by ion beam-assisted thermal evaporation technology,and th

关 键 词：硫系玻璃 减反射薄膜 附着力 红外 激光损伤阈值 

分 类 号：TB34[一般工业技术—材料科学与工程]