Ib型金刚石单晶生长及合成腔体温度场分布研究  

Study on the Growth of Type-Ib Diamond Single Crystal and the Temperature Field Distribution in the Synthesis Cavities

作　　者：肖宏宇 李勇[1] 田昌海[1] 张蔚曦[1] 王强[1] 肖政国 王应[1] 金慧[1] 鲍志刚[2] 周振翔[3] XIAO Hongyu;LI Yong;TIAN Changhai;ZHANG Weixi;WANG Qiang;XIAO Zhengguo;WANG Ying;JIN Hui;BAO Zhigang;ZHOU Zhenxiang(Department of Physics and Electrical Engineering,Tongren University,Tongren 554300,China;Department of Mathematics and Physics,Luoyang Institute of Science and Technology,Luoyang 471023,China;Beijing Sinoma Snythetic Crystals Co.,Ltd.,Beijing 100018,China)

机构地区：[1]铜仁学院物理与电子工程系,铜仁554300 [2]洛阳理工学院数理部,洛阳471023 [3]北京中材人工晶体研究院有限公司,北京100018

出　　处：《人工晶体学报》2024年第6期959-966,共8页Journal of Synthetic Crystals

基　　金：国家自然科学基金(12064038);贵州省科技厅项目(黔科合基础-ZK[2023]一般467,ZK[2021]重点019,ZK[2021]一般021,ZK[2021]一般034,ZK[2021]一般031,ZK[2023]重点049);铜仁学院科研启动基金(trxyDH2221)。

摘　　要：本文利用六面顶压机,在5.7 GPa、1560~1600 K的压力温度条件下,分别采用ϕ15 mm和ϕ30 mm两种尺寸合成腔体,系统开展了Ib型金刚石单晶的晶体生长工作,并借助于有限元法对两种尺寸合成腔体的温度场分布进行了研究。首先,借助于有限元法分别对两种尺寸合成腔体的触媒温度场分布进行了模拟。模拟结果揭示了ϕ30 mm合成腔体温度场的均匀性要明显优于ϕ15 mm合成腔体。其次,金刚石晶体生长实验结果表明,采用ϕ15 mm合成腔体很难实现质量超过1.2 ct(1 ct=0.2 g)的优质Ib型金刚石单晶的生长,而ϕ30 mm合成腔体更适合用于生长大尺寸优质Ib型金刚石单晶。再次,扫描电子显微镜表面形貌测试结果表明,合成腔体尺寸的扩大不会对Ib型金刚石单晶的表面结晶质量产生显著影响。最后,拉曼光谱的测试结果表明,除了多晶金刚石的结晶质量较差,本研究两种腔体合成的其他金刚石单晶测试样品均具有较好的结晶质量。本研究对宝石级金刚石单晶大尺寸合成腔体的设计、大尺寸金刚石单晶的生长,以及多晶种法金刚石单晶合成技术的完善均具有一定的学术参考价值。In this paper,type-Ib diamond single crystals,using two different sizes of synthesis cavities ofϕ15 mm andϕ30 mm,were synthesized under 5.7 GPa,1560~1600 K,and the temperature field distributions of the two sizes of synthesis cavities were studied using finite element method(FEM).Firstly,the temperature field distributions of two different sizes of synthesis cavities were simulated using finite element method.The average radial temperature gradient and average axial temperature gradient of theϕ15 mm synthesis cavity are 0.573 and 5.700 K/mm,respectively.The average radial temperature gradient and average axial temperature gradient of theϕ30 mm cavity are 0.093 and 2.280 K/mm,respectively.The simulation results reveal that the uniformity of the temperature field in theϕ30 mm synthesis cavity is significantly better than that in theϕ15 mm synthesis cavity.Secondly,the reproducible growth of high-quality type-Ib diamond large single crystals was achieved using both synthesis cavities mentioned above.Theϕ15 mm synthetic cavity is difficult to achieve the growth of high-quality type-Ib diamond single crystals weighing more than 1.2 ct(1 ct=0.2 g),while theϕ30 mm synthetic cavity is more suitable for the growth of large-size high-quality type-Ib diamond single crystals.Furthermore,the scanning electron microscopy(SEM)test results show that the surface flatness of high-quality type-Ib diamond single crystals grown using two different sizes of synthesis cavities in this study is good,and the expansion of the synthesis cavity has no significant effect on the crystal quality of Ib diamond single crystal surface.Finally,Raman spectrum test results show that the crystal quality of polycrystalline diamond deteriorates,and other diamond single crystal samples synthesized by two kinds of synthesis cavity in this study have better crystal quality.This research has certain academic reference value for the design of large size synthesis cavity of gem grade diamond single crystal,the growth of large size diamond single crys

关 键 词：Ib型金刚石 高温高压 温度梯度法 触媒 温度场 多晶 

分 类 号：TQ163[化学工程—高温制品工业]