C波段横向激励薄膜体声波谐振器设计与制备  

Design and Fabrication of C-Band Laterally Excited Bulk Acoustic Resonator

作　　者：吴高米 马晋毅 李尚志 司美菊 唐小龙 蒋世义 江洪敏 张祖伟 WU Gaomi;MA Jinyi;LI Shangzhi;SI Meiju;TANG Xiaolong;JIANG Shiyi;JIANG Hongmin;ZHANG Zuwei(Science and Technology on Analog Integrated Circuit Laboratory,The 24th Institute of CETC,Chongqing 401332,China;CETC Chips Technology Group Co.,Ltd,Chongqing 401332,China;NIICAS(Chongqing)Technology Co.,Ltd,Chongqing 401332,China)

机构地区：[1]中国电子科技集团公司第二十四研究所,模拟集成电路国家级重点实验室,重庆401332 [2]中电科芯片技术(集团)有限公司,重庆401332 [3]国知创芯(重庆)科技有限公司,重庆401332

出　　处：《压电与声光》2024年第3期285-289,共5页Piezoelectrics & Acoustooptics

基　　金：重庆市博士后科学基金资助项目(CSTB2023NSCQ-BHX0030)。

摘　　要：针对未来移动通信对射频前端器件提出的多频率、高集成新要求,开展了兼具声表面波(SAW)谐振器和薄膜体声波谐振器(FBAR)技术特点的新型横向激励兰姆波谐振器研究。该文介绍了基于c轴择优取向氮化铝(AlN)压电薄膜的C波段横向激励薄膜体声波谐振器(XBAR)的结构设计、参数优化和制备方法,并进行了工艺验证。通过剥离和刻蚀等步骤制备了谐振频率4.464 GHz、品质因数3039、品质因数与频率之积(f×Q)达到1.56×10^(13)GHz、面积小于0.12 mm^(2)的低杂波XBAR谐振器,并仿真分析了其用于射频滤波器的可行性。该研究为进一步研制多频率、高集成的小型化XBAR滤波器组件提供了有效的设计技术和工艺技术支撑。Considering the new requirements for multiple frequencies and high integration in RF front-end devices for future mobile communication,this study examines a novel laterally excited Lamb wave resonator that exhibits both SAW and FBAR technical characteristics.The structure design,parameter optimization,and preparation method for a C-band laterally excited bulk acoustic resonator(XBAR)based on a c-axis optimally oriented aluminum nitride piezoelectric film are proposed,and the process is validated.Two XBAR samples with spurious mitigation were fabricated using lift-off and ICP-RIE,achieving a resonant frequency of 4.464 GHz,a quality factor of 3039,and an f×Q product of 1.56×10^(13)GHz in a footprint smaller than 0.12 mm^(2).The application potential of the prepared resonators in an RF filter was simulated and analyzed.This study provides an effective design and process technology support for the further development of multi-frequency and highly integrated miniaturized filter modules.

关 键 词：压电微机电系统(MEMS)器件 C波段射频滤波器 横向激励薄膜体声波谐振器(XBAR) 多频率 高集成 

分 类 号：TN384[电子电信—物理电子学] TN65TN713