一款基于5G应用的宽带低功耗LNA设计  

A broadband low-power LNA design based on 5G applications

作　　者：李靖 陈磊 LI Jing;CHEN Lei(School of Electronic and Information Engineering,Shanghai University of Electric,Shanghai 201306,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海201306

出　　处：《电子设计工程》2024年第13期158-162,共5页Electronic Design Engineering

摘　　要：针对目前5G毫米波通信以及雷达系统应用要求,设计了一款等效跨导增强的宽带低噪声放大器(LNA)。整体架构采用差分形式,有源部分由共栅管与共源管(Cascode)组成,输入端采用一种三线圈反向耦合变压器,实现了宽带输入匹配、单端到差动转换、等效跨导增强和噪声抑制等功能。宽带电路由级间双峰Balun实现。整体电路采用SMIC 40 nm CMOS工艺进行设计,后仿真结果表明,在1.1 V电源电压下,LNA实现了9 GHz的带宽,15 dBm功率增益,NF为3 dB,IIP3大于-1.7 dBm,输入回波损耗S11小于-10 dB。A broadband Low Noise Amplifier(LNA)with equivalent transconductance enhancement is designed to meet the application requirements of 5G millimeter wave communication and radar systems.The overall architecture is in differential form.The active part is composed of common grid tube and common source tube(Cascode).The input end uses a three-coil reverse coupling transformer to realize broadband input matching,single-terminal to differential conversion,equivalent transconductance enhancement and noise suppression.The broadband circuit is realized by the inter-stage bimodal Balun.The overall circuit is designed using SMIC 40 nm CMOS technology.The post-simulation results show that LNA achieves a bandwidth at 9 GHz,a power gain of 15 dBm,a NF of 3 dB,and an IIP3 of more than-1.7 dBm at 1.1 V power supply voltage.Input return loss S11 is less than-10 dB.

关 键 词：5G毫米波通信 CMOS LNA 宽带 等效跨导增强 

分 类 号：TN365[电子电信—物理电子学]