Lateral photovoltaic effect in the Ni-SiO_(2)-Si structure with bias  

作　　者：LING Xiang ZHU Pengfei ZHU Kun SONG Pei LI Xiong 

机构地区：[1]School of Mathematics,Physics and Statistics,Shanghai University of Engineering Science,Shanghai 201600,China [2]School of Electrical Engineering,Liupanshui Normal University,Liupanshui 553004,China [3]School of Railway Telecommunication,Hunan Technical College of Railway High-speed,Hengyang 421002,China

出　　处：《Optoelectronics Letters》2024年第5期257-264,共8页光电子快报（英文版）

摘　　要：We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO_(2)-Si structure with bias due to the appropriate barrier height.The LPE has a prominent sensitivity and linearity with 532 nm wavelength laser.The transient response time is 450μs and the relaxation time is 2 250μs in the Ni-SiO_(2)-Si structure without bias.The LPE sensitivity has a significant improvement with bias.The transient response time is 6μs and the relaxion time is 47μs with-7 V bias,not only improving the LPE sensitivity,but also increasing the response speed with bias.The research shows that the Schottky barrier structure can improve the sensitivity and linearity of LPE with bias effectively,and thus it can be used in position sensitive sensors.

关 键 词：LPE STRUCTURE effect 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TB34[自动化与计算机技术—控制科学与工程]