考虑驱动电压与开关时序协同调控的Si/SiC混合器件开关策略  被引量:1

Switching Strategy of Si/SiC Hybrid Switch Considering Coordinated Control of Driving Voltage and Switching Sequence

在线阅读下载全文

作  者:肖标 涂春鸣[1] 郭祺 肖凡[1] 龙柳 刘平[1] XIAO Biao;TU Chunming;GUO Qi;XIAO Fan;LONG Liu;LIU Ping(College of Electrical and Information Engineering,Hunan University,Changsha 410082,Hunan Province,China)

机构地区:[1]湖南大学电气与信息工程学院,湖南省长沙市410082

出  处:《中国电机工程学报》2024年第12期4904-4914,I0025,共12页Proceedings of the CSEE

基  金:国家自然科学基金项目(52130704)。

摘  要:硅基(Si)绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)和碳化硅基(SiC)金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor,MOSFET)并联组成的Si/SiC混合器件,已被证实具有SiC MOSFET的高开关频率、低开关损耗特性和Si IGBT的大载流能力、低成本的优势。然而,目前Si/SiC混合器件性能提升的研究并未兼顾效率和可靠性,且存在调控手段单一的劣势。基于此,该文详细分析不同负载电流下驱动电压、开关时序等调控参数对Si/SiC混合器件损耗和电应力的影响,提出一种考虑驱动电压与开关时序协同调控的Si/SiC混合器件开关策略。所提开关策略通过不同电流区间采用驱动电压与开关时序相配合的方式,在保障Si/SiC混合器件可靠性的前提下,提高其运行效率。该文搭建双脉冲测试实验平台与稳态参数测量实验平台对所提开关策略进行验证。实验结果表明,相较于传统开关策略,Si/SiC混合器件采用本文所提开关策略在开通损耗、关断损耗以及导通损耗方面分别减少13%、21%和32%。The hybrid switch composed of Si based insulated gate bipolar transistor(IGBT)and SiC based metal oxide semiconductor field effect transistor(MOSFET)in parallel has been proved to have the high switching frequency and low switching loss characteristics of SiC MOSFET,and the large current-carrying capacity and low cost advantages of Si IGBT.However,the current research on performance improvement of Si/SiC hybrid Switch does not take efficiency and reliability into account,and there is a disadvantage of single control parameter.Based on this,the effects of control parameters such as drive voltage and switching sequence on power loss and electric stress of Si/SiC hybrid Switch under different load current are analyzed in detail.,and the switching strategy of Si/SiC hybrid switch considering coordinated control of driving voltage and switching sequence is proposed.The proposed switching strategy adopts the combination of driving voltage and switching sequence in different current intervals,which not only ensures the reliability of Si/SiC hybrid switch,but also improves their operating efficiency.The double-pulse test experimental platform and the steady-state parameter measurement experimental platform are built to verify the proposed switching strategy.The experimental results show that compared with traditional switching strategies,turn-on switching loss,turn-off switching loss and conduction loss of the Si/SiC hybrid Switch using the proposed switch strategy are reduced by 13%,21%and 32%,respectively.

关 键 词:碳化硅基(SiC) Si/SiC混合器件 驱动电压 开关时序 开关策略 

分 类 号:TM76[电气工程—电力系统及自动化]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象