Enhanced Spin–Orbit Torques in Graphene by Pt Adatoms Decoration  

作　　者：王怡飞 张其 徐海茗 郭玺 常宇晗 张健荣 和孝东 左亚路 崔宝山 席力 Yifei Wang;Qi Zhang;Haiming Xu;Xi Guo;Yuhan Chang;Jianrong Zhang;Xiaodong He;Yalu Zuo;Baoshan Cui;Li Xi(Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education,Lanzhou University,Lanzhou 730000,China)

机构地区：[1]Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education,Lanzhou University,Lanzhou 730000,China

出　　处：《Chinese Physics Letters》2024年第6期141-147,共7页中国物理快报（英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2021YFB3501304);the National Natural Science Foundation of China(Grant Nos.91963201 and 51671098);the 111 Project(Grant No.B20063);the Open Research Fund of Songshan Lake Materials Laboratory(Grant No.2023SLABFN05);the Program for Changjiang Scholars and Innovative Research Team in University PCSIRT(Grant No.IRT16R35);the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2021-ct01);the Natural Science Foundation of Gansu Province(Grant No.22JR5RA474)。

摘　　要：Graphene(Gr)with widely acclaimed characteristics,such as exceptionally long spin diffusion length at room temperature,provides an outstanding platform for spintronics.However,its inherent weak spin–orbit coupling(SOC)has limited its efficiency for generating the spin currents in order to control the magnetization switching process for applications in spintronics memories.Following the theoretical prediction on the enhancement of SOC in Gr by heavy atoms adsorption,here we experimentally observe a sizeable spin–orbit torques(SOTs)in Gr by the decoration of its surface with Pt adatoms in Gr/Pt(t Pt)/Fe Ni trilayers with the optimal damping-like SOT efficiency around 0.55 by 0.6-nm-thick Pt layer adsorption.The value is nearly four times larger than that of the Pt/Fe Ni sample without Gr and nearly twice the value of the Gr/Fe Ni sample without Pt adsorption.The efficiency of the enhanced SOT in Gr by Pt adatoms is also demonstrated by the field-free SOT magnetization switching process with a relatively low critical current density around 5.4 MA/cm^(2)in Gr/Pt/Fe Ni trilayers with the in-plane magnetic anisotropy.These findings pave the way for Gr spintronics applications,offering solutions for future low power consumption memories.

关 键 词：MAGNETIZATION exceptional GENERATING 

分 类 号：O469[理学—凝聚态物理] TQ127.11[理学—电子物理学]