超低介电常数的多孔F-pSiCOH薄膜制备及其紫外固化处理  

Preparation and UV curing of porous F-pSiCOH film with ultra-low dielectric constant

作　　者：陈云[1] Chen Yun(Artificial Intelligence Department,Jiangxi University of Technology,Nanchang 330098)

机构地区：[1]江西科技学院人工智能学院,南昌330098

出　　处：《化工新型材料》2024年第S01期128-131,142,共5页New Chemical Materials

基　　金：江西省教育厅科学技术研究项目(GJJ212008)。

摘　　要：面向高性能集成电路可靠性设计要求之下,开展以硅集成电路(IC)三维集成器件超低介电常数的介电薄膜研究。采用化学气相沉积法制备了一种超低介电常数(k)值的多孔F-pSiCOH薄膜。利用傅里叶变换红外光谱测定了多孔F-pSiCOH薄膜的化学结构和化学键,并探究了紫外线辐射对多孔F-pSiCOH薄膜机械性能的影响。结果表明:纳米孔和氟原子的引入能有效地降低介电常数,使多孔F-SiCOH薄膜的k值为2.15。紫外固化处理增强了多孔F-pSiCOH薄膜的弹性模量,使多孔F-pSiCOH薄膜的弹性模量从4.84GPa增大到5.76GPa,力学性能得到优化。In order to meet the reliability design requirements of high-performance integrated circuits,this paper studied ultra-low dielectric constant dielectric film for silicon integrated circuits(ICs)three-dimensional integrated devices.A porous F-pSiCOH film with ultra-low dielectric constant(k)was prepared by chemical vapor deposition.The chemical structure and chemical bonds of the porous F-pSiCOH film were determined by Fourier transform infrared spectroscopy,and the effect of ultraviolet radiation on the mechanical properties of porous F-pSiCOH film was investigated.The results showed that the dielectric constant of porous F-pSiCOH film could be reduced effectively by the introduction of nanopore and fluorine atoms,achieving a k value of 2.15 for the porous F-pSiCOH film.UV curing enhanced the elastic modulus of the porous F-pSiCOH film,which increased it from 4.84GPa to 5.76GPa and optimized the mechanical properties.

关 键 词：硅集成电路 低介电常数介电材料 多孔SiCOH薄膜 紫外固化 

分 类 号：O484.4[理学—固体物理]