低压化学气相沉积氮化硅薄膜工艺研究  

Research on the Process of Low Pressure Chemical Vapor Deposition of Silicon Nitride Film

作　　者：刘宗芳 尤益辉 LEE Choonghyun LIU Zongfang;YOU Yihui;LEE Choonghyun(China Nanhu Academy of Electronics and Information Technology,Jiaxing 314001,China;Zhejiang University,Hangzhou 310058,China)

机构地区：[1]中国电子科技南湖研究院,浙江嘉兴314001 [2]浙江大学,浙江杭州310058

出　　处：《智能物联技术》2024年第1期81-84,共4页Technology of Io T& AI

基　　金：浙江省“领雁”研发攻关计划项目(2022C1098)。

摘　　要：低压化学气相沉积法(Low-Pressure Chemical Vapor Deposition,LPCVD)沉积的氮化硅薄膜(LPSi_(3)N_(4))具有质量高、副产物少、厚度均匀性好等特性,常应用于局部氧化的掩蔽膜、电容的介质膜、层间绝缘膜等工艺制程。介绍低压化学气相沉积氮化硅薄膜(LPSi_(3)N_(4))的制备工艺,以及不同工艺参数的调试对氮化硅薄膜均匀性和沉积速率的影响。The silicon nitride film (LPSi_3N_4) deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) has the characteristics of high quality,few by-products and good thickness uniformity.It is usually used in the process of local oxide mask film,capacitor dielectric film and interlayer insulation film.This paper mainly introduces the preparation technology of low pressure chemical vapor deposition silicon nitride film (LPSI_3N_4) and the influence of different process parameters on the uniformity and deposition rate of the film.

关 键 词：低压化学气相沉积(LPCVD) 氮化硅薄膜 均匀性 沉积速率 

分 类 号：TN44[电子电信—微电子学与固体电子学]