Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge Deposition  

作　　者：舒启江 YANG Linjing LIU Hongxing 黄鹏儒 SHU Qijiang;YANG Linjing;LIU Hongxing;HUANG Pengru(Institute of Information,Yunnan University of Chinese Medicine,Kunming 650500,China;Guangxi Key Laboratory of Information Materials and Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials,School of Material Science&Engineering,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]Institute of Information,Yunnan University of Chinese Medicine,Kunming 650500,China [2]Guangxi Key Laboratory of Information Materials and Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials,School of Material Science&Engineering,Guilin University of Electronic Technology,Guilin 541004,China

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2024年第4期888-894,共7页武汉理工大学学报（材料科学英文版）

基　　金：Founded by the National Key Research and Development Program(No.2021YFB3802400);the National Natural Science Foundation of China(No.52161037);the Basic Research Project of Yunnan Province(No.202001AU070112)。

摘　　要：The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

关 键 词：Ge/Si QDs deposition temperatures evolution law photoelectric performance 

分 类 号：TB383.1[一般工业技术—材料科学与工程]