大尺寸AlN活性金属焊接覆铜基板的界面结合机理  

Interface bonding mechanism of large size AlN active metal brazing substrate

作　　者：许海仙[1,2] 曾祥勇 朱家旭 周泽安 张振文 汤文明[3,4] XU Haixian;ZENG Xiangyong;ZHU Jiaxu;ZHOU Zean;ZHANG Zhenwen;TANG Wenming(43 Institute,China Electronics Technology Group Corporation,Hefei230088,China;Hefei Shengda Electronic Technology Industry Co.,Ltd.,Hefei230088,China;School of Materials Science and Engineering,Hefei University of Technology,Hefei230009,China;Anhui Province Key Laboratory of Microsystem,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第43研究所,安徽合肥230088 [2]合肥圣达电子科技实业有限公司,安徽合肥230088 [3]合肥工业大学材料科学与工程学院,安徽合肥230009 [4]微系统安徽省重点实验室,安徽合肥230088

出　　处：《电子元件与材料》2024年第5期573-577,584,共6页Electronic Components And Materials

基　　金：安徽省重大科技专项(202003a05020006);安徽省重点研究与开发计划项目(202004a05020022)。

摘　　要：基于190 mm×139 mm×0.635 mm的大尺寸AlN表面活性金属钎焊(AMB)覆铜板工艺制程,开展其界面显微组织、物相组成等的研究,确定钎焊界面结合机理,为制备大尺寸、低气孔、高剥离强度AlN-AMB覆铜板提供支持。结果表明,在大尺寸AlN-AMB覆铜板钎焊过程中,Ag-Cu-Ti合金钎料中的Ag-Cu合金与Cu箔扩散溶合,形成强的冶金结合界面。同时,钎料中的活性Ti原子向AlN基板表面扩散,并与其反应,生成厚度为0.5~1μm的TiN反应层,形成强的反应结合界面。此外,钎料熔体难以填充基板的AlN晶界和凹坑,其中的Ti原子也不与Y-Al-O第二相颗粒反应,导致AlN基板表面TiN反应层不连续分布,形成气孔,降低大尺寸AlN-AMB覆铜板的界面结合强度及可靠性。Based on the 190 mm×139 mm×0.635 mm large-size AlN active metal brazing(AMB)substrate technological process,the microstructures and phase compositions of the brazed interface were investigated to clarify the interface bonding mechanism,which provide a guide for preparing large size,low porosity,and high peeling strength AlN-AMB substrate.The results show that during brazing large-size AlN-AMB substrate,Ag-Cu alloy in the Ag-Cu-Ti alloy solder is bonded to the Cu foil to form an intensive metallurgical bonding interface via atomic interdiffusion.Meanwhile,the active Ti atoms in the solder diffuse to the AlN substrate surface,and react with AlN to form a 0.5-1μm TiN reaction layer to finally construct a strong bonding reaction interface.Moreover,the solder melt do not fill the AlN grain boundaries and pits on the surface of the AlN substrate,and the Ti atoms do not react with the Y-Al-O secondary phase particles.It results in the formation of the discontinuous TiN reaction layer and pores.As a result,the interface bonding strength and reliability are decreased for the large size AlN-AMB substrate.

关 键 词：氮化铝基板 活性金属钎焊 显微结构 相组成 AG-CU-TI钎料 

分 类 号：TQ174.75[化学工程—陶瓷工业]