SiC MOSFET的质子单粒子效应  

Proton-Induced Single Event Effect of SiC MOSFETs

作　　者：史慧琳 郭刚[1] 张峥 李府唐 刘翠翠 张艳文[1] 殷倩 Shi Huilin;Guo Gang;Zhang Zheng;Li Futang;Liu Cuicui;Zhang Yanwen;Yin Qian(National Innovation Center of Radiation Application,China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]中国原子能科学研究院国家原子能机构抗辐照应用技术创新中心,北京102413

出　　处：《半导体技术》2024年第7期654-659,共6页Semiconductor Technology

基　　金：国家自然科学基金(U2167208,U2267210);中核集团青年英才基金项目(11FY212306000801)。

摘　　要：SiC金属氧化物半导体场效应晶体管(MOSFET)在深空探测领域具有广阔的应用前景,但空间质子引发的单粒子效应(SEE)对航天器稳定运行造成了严重威胁。对平面栅结构与非对称沟槽栅结构的SiC MOSFET进行了能量为70、100与200 MeV的质子辐照实验。实验结果表明,两种SiC MOSFET的单粒子烧毁(SEB)阈值电压均大于额定漏源电压的75%;SEB阈值电压随质子能量升高而降低。对两种器件进行辐照后栅应力测试发现,两种结构的器件由于沟道不同而对栅应力的响应存在差异;不同的质子能量会在栅极引入不同程度的辐射损伤,低能质子更容易在栅氧化层发生碰撞而引入氧化物潜在损伤。该研究可为揭示SiC MOSFET质子SEE机理和评估抗辐射能力提供参考。SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)have broad appli-cation prospects in the field of deep space exploration.However,the space proton-induced single event effect(SEE)poses a serious threat to the stable operation of spacecrafts.The SiC MOSFETs with planar gate structure and asymmetric trench gate structure were subjected to proton irradiation experiments with energies of 70,100 and 200 MeV.The experimental results show that the single event burnout(SEB)threshold voltages of the two kinds of SiC MOSFETs are greater than 75%of the rated drain-source voltage,and the SEB threshold voltages decrease with the increase of proton energy.Post-irradiation gate stress testing of the two kinds of devices reveals the difference in the response to gate stress due to the different channels.Different proton energies result in varying extents of radiation damage to the gate,and the low-energy protons are more likely to collide at the gate oxide layer and introduce potential damage to the oxide.This study can provide reference for revealing the mechanism of proton-induced SEE of SiC MOSFETs and evaluating the radiation resistance.

关 键 词：碳化硅(SiC) 金属氧化物半导体场效应晶体管(MOSFET) 单粒子效应(SEE) 单粒子烧毁(SEB) 电离效应 辐射损伤 

分 类 号：TN386.1[电子电信—物理电子学] TN306