一种电荷灵敏前置放大器的设计与实现  

Design and Implementation of a Charge Sensitive Preamplifier

作　　者：王佳帅 秦晋 许鹏 卜洪涛 王道平 WANG Jiashuai;QIN Jin;XU Peng;BU Hongtao;WANG Daoping(Rocket Force University of Engineering,Xi’an 710025,Shaanxi;Xi’an CNNC Nuclear Instrument Co.Ltd,Xi’an 710061,Shaanxi)

机构地区：[1]火箭军工程大学,陕西西安710025 [2]西安中核仪器股份有限公司,陕西西安710061

出　　处：《火箭军工程大学学报》2024年第3期74-80,共7页Journal of Rocket Force University of Engineering

摘　　要：针对传统金硅面垒α谱仪所使用的电荷灵敏前置放大器存在电路结构复杂、损坏后维修周期长的问题,基于低噪声场效应管和集成运算放大器,使用电路仿真软件,设计了针对金硅面垒半导体探测器的电荷灵敏前置放大器,简化了电路结构。对该前置放大器参数进行了理论计算和实验测试。结果表明:自制的电荷灵敏前置放大器的电荷变换增益为5×10^(12)V/C,能量变换增益为222 mV/MeV,上升时间为200 ns;将其应用于金硅面垒α谱仪之中,能够测量239Pu板状源的α能谱。To cover shortages of the charge sensitive preamplifier used in the existing Au-Si surface barrier alpha spectrometer,such as complex circuit structure and long maintenance cycle after damage,a charge sensitive preamplifier for gold silicon surface barrier semiconductor detec-tor was designed based on low noise field effect transistor and integrated operational amplifier.The proposed preamplifier was designed with circuit simulation software and its simpler circuit structure.Furthermore,parameters of the charge sensitive preamplifier was obtained by theoreti-cal calculation and verified by experimental tests.Results showed that the charge conversion gain of the selfmade charge sensitive preamplifier is 5×10^(12)V/C,energy conversion gain is 222 mV/MeV and rise time is 200 ns.When it was applied to the Au-Si surface barrierαspectrometer,it can measure theαenergy spectrum of 239Pu plated source.

关 键 词：电荷灵敏前置放大器 金硅面垒探测器 电路仿真 α能谱 

分 类 号：TN722.7[电子电信—电路与系统]