Nanoimprint-induced strain engineering of two-dimensional materials  

作　　者：Chuying Sun Jianwen Zhong Zhuofei Gan Liyang Chen Chuwei Liang Hongtao Feng Zhao Sun Zijie Jiang Wen-Di Li 

机构地区：[1]The University of Hong Kong,Hong Kong,China

出　　处：《Microsystems & Nanoengineering》2024年第2期323-332,共10页微系统与纳米工程（英文）

基　　金：supported by the Research Grants Council of the Hong Kong Special Administrative Region(Awards No.17207419,17209320,C7018-20G,and AoE/P-701/20);the Platform Technology Funding Programme,and the Seed Funding Programme for Basic Research(202011159235 and 202010160046)of the University of Hong Kong.

摘　　要：The high stretchability of two-dimensional(2D)materials has facilitated the possibility of using external strain to manipulate their properties.Hence,strain engineering has emerged as a promising technique for tailoring the performance of 2D materials by controlling the applied elastic strain field.Although various types of strain engineering methods have been proposed,deterministic and controllable generation of the strain in 2D materials remains a challenging task.Here,we report a nanoimprint-induced strain engineering(NISE)strategy for introducing controllable periodic strain profiles on 2D materials.A three-dimensional(3D)tunable strain is generated in a molybdenum disulfide(MoS_(2))sheet by pressing and conforming to the topography of an imprint mold.Different strain profiles generated in MoS_(2)are demonstrated and verified by Raman and photoluminescence(PL)spectroscopy.The strain modulation capability of NISE is investigated by changing the imprint pressure and the patterns of the imprint molds,which enables precise control of the strain magnitudes and distributions in MoS_(2).Furthermore,a finite element model is developed to simulate the NISE process and reveal the straining behavior of MoS_(2).This deterministic and effective strain engineering technique can be easily extended to other materials and is also compatible with common semiconductor fabrication processes;therefore,it provides prospects for advances in broad nanoelectronic and optoelectronic devices.

关 键 词：STRAIN DIMENSIONAL MOLYBDENUM 

分 类 号：TB383[一般工业技术—材料科学与工程]