直耦增强型CMOS相机技术研究  

Evaluation of Direct-coupled Intensified CMOS Camera

作　　者：李亚情 李晗艳 张立昀 陈旭华 李晓露 邱永生[1] 何俊 高天礼 杜培德 周盛涛 LI Yaqing;LI Hanyan;ZHANG Liyun;CHEN Xuhua;LI Xiaolu;QIU Yongsheng;HE Jun;GAO Tianli;DU Peide;ZHOU Shengtao(North Night Vision Technology Co.Ltd,Kunming 650217,China;Shandong Provincial Military Civilian Integration Development Promotion Center,Jinan 266406,China)

机构地区：[1]北方夜视技术股份有限公司,云南昆明650217 [2]山东省军民融合发展促进中心,山东济南266406

出　　处：《红外技术》2024年第6期699-706,721,共9页Infrared Technology

基　　金：国家自然科学基金(11535014)。

摘　　要：直耦增强型CMOS(intensified complementary metal-oxide-semiconductor,ICMOS)相机通过将像增强器输出窗与CMOS直接耦合而成,具备灵敏度高、响应速度快、光谱范围可调等特点。本文根据ICMOS的组成结构,分析了阴极、微通道板、荧光屏、CMOS等各组成部件对直耦ICMOS成像性能的影响,提出ICMOS用像增强器、CMOS成像器件的选型依据,并结合公司对像增强器的加工优势,基于18 mm NVT-7像增强器和1英寸CMOS开展了实际微光成像验证。结果表明,采用直耦方式的ICMOS相机能够在5×10^(-4)lx条件下清晰成像,分辨力达到16 lp/mm。此外,用于ICMOS耦合的像增强器增益不宜过高,4000 cd/(m^(2)·lx)比较适宜,另外,在增益适宜的条件下,荧光屏输出亮度对其性能影响不大。An ICMOS is fabricated by directly coupling the output window of the image intensifier with a CMOS resulting in the characteristics of high sensitivity,fast response,and adjustable spectral range.In this study,the influence of the cathode,microchannel plate,phosphor screen,CMOS,and other components on the imaging performance of direct-coupled ICMOS are analyzed according to the composition of ICMOS,thereby proposing the principle for selecting the image intensifier and CMOS for ICMOS.The advantages of image intensifier manufacturing combined with the actual low-light imaging performance of direct-coupling ICMOS are verified on an 18 mm NVT-7 image intensifier and 1-inch CMOS.The results show that the ICMOS camera can be used under 5×10^(-4)lx light conditions with a resolution of 16 lp/mm.In addition,the gain of the image intensifier for ICMOS should not exceed 4000 cd/(m^(2)×lx),and the output brightness of the phosphor screen has minimal effect on performance under the condition of an appropriate gain.

关 键 词：像增强器 光锥 直耦 分辨力 

分 类 号：TN22[电子电信—物理电子学]