Al组分阶梯型渐变电子阻挡层深紫外LED性能研究  

Study on the Performance of Deep Ultraviolet LED with Al Component Stepped Gradient Electron Barrier Layer

作　　者：陈颖 黄丽莹 张悦 冯镜如 钟伟[3] CHEN Ying;HUANG Liying;ZHANG Yue;FENG Jingru;ZHONG Wei(School of Physics and Electronic Information,Gannan Normal University,Ganzhou 341000,China;Ganzhou Science and Technology Museum,Ganzhou 341000,China;School of Integrated Circuits,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]赣南师范大学物理与电子信息学院,江西赣州341000 [2]赣州科技馆,江西赣州341000 [3]广东工业大学集成电路学院,广州510006

出　　处：《赣南师范大学学报》2024年第3期85-89,共5页Journal of Gannan Normal University

基　　金：江西省研究生创新专项资金项目(YC2023-S866);大学生创新训练计划项目(S202310418012)。

摘　　要：为减少电子泄漏改善发光性能,本文基于深紫外发光二极管(LED)提出了一种Al组分阶梯型渐变电子阻挡层(EBL)结构.通过数值研究,对比分析了不同EBL结构对深紫外LED发光性能的影响规律.结果表明,相较于传统EBL结构的深紫外LED(样品A),Al组分阶梯型渐变EBL结构的深紫外LED(样品B、样品C)最大内量子效率(IQE)分别提高了7.9%、14.2%,光输出功率(LOP)在200 mA下分别提升了73.3%、80.1%.这是因为Al组分阶梯型渐变EBL结构有效改善了EBL处极化效应引起的电场强度,进而减少了电子泄漏.In order to reduce electron leakage and improve optical performance,an Al component stepped gradient electron barrier layer(EBL)structure based on deep ultraviolet light-emitting diode(LED)is proposed.The influence of different EBL structures on the optical performance of deep ultraviolet LED was studied by numerical simulation.The results show that compared with the deep ultraviolet LED of traditional EBL structure(Sample A),the maximum internal quantum efficiency(IQE)of deep ultraviolet LED with Al component stepped gradient EBL structure(Sample B and Sample C)is increased by 7.9%and 14.2%,respectively,and the light output power(LOP)is increased by 73.3%and 80.1%at 200 mA,respectively.This is because the Al component stepped gradient EBL structure effectively improves the electric field intensity caused by the polarization effect at EBL,thus reducing electron leakage.

关 键 词：深紫外LED 极化效应 电子泄漏 电子阻挡层 光输出功率 

分 类 号：TN312.8[电子电信—物理电子学]