四层插入层量子垒AlGaN深紫外LED研究  

Study of AlGaN Deep Ultraviolet LED with Four-layer Insertion Layer Quantum Barrier

作　　者：方文浚 万垂铭 李深海 谢子敬 谭礼军 FANG Wenjun;WAN Chuiming;LI Shenhai;XIE Zijing;TAN Lijun(School of Physics and Electronic Information,Gannan Normal University,Ganzhou 341000,China;APT electronics Co.LTD,Guangzhou 510641,China;School of Microelectronics,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]赣南师范大学物理与电子信息学院,江西赣州341000 [2]广东晶科电子股份有限公司,广州511458 [3]华南理工大学微电子学院,广州510641

出　　处：《赣南师范大学学报》2024年第3期90-94,共5页Journal of Gannan Normal University

基　　金：江西省教育厅科学技术研究项目(GJJ211436);赣南师范大学博士科研启动基金(BSJJ202134)。

摘　　要：本文通过对不同量子垒结构的AlGaN深紫外LED进行数值研究,对比分析了量子垒结构与其发光性能之间的关联.结果表明,相较于传统量子垒结构的样品A,四层插入层量子垒结构的样品B和样品C,内量子效率峰值分别提升了27.04%和18.8%,光输出功率在200 mA下分别提升了31.04%和21.62%.这主要是因为四层插入层量子垒结构可有效增加有源区内量子垒的能带势垒高度,提升量子阱对载流子的束缚能力.In this paper,the relationship between the quantum barrier structure and its optical performance is compared and analyzed by numerical research on AlGaN deep ultraviolet LEDs with different quantum barrier structures.The results show that compared with the Sample A of a traditional quantum barrier structure,the peak internal quantum efficiency of Sample B and Sample C of the four-layer insertion layer quantum barrier structure is increased by 27.04%and 18.8%,respectively,and the light output power is increased by 31.04%and 21.62%at 200 mA,respectively.This is mainly because the four-layer insertion layer quantum barrier structure can effectively increase the energy band barrier height of the quantum barrier in the active region and improve the ability of quantum wells to bind carriers.

关 键 词：AlGaN深紫外LED 量子垒 插入层 内量子效率 辐射复合率 

分 类 号：TN312.8[电子电信—物理电子学]