ZnO-B_(2)O_(3)-SiO_(2) 玻璃对ZnO线性电阻陶瓷结构及电学性能的影响  

Effects of ZnO-B_(2)O_(3)-SiO_(2) Glass on the Structure and Electrical Properties of ZnO Linear Resistance Ceramics

作　　者：陈芳[1] 鲁加加 李良锋[1] 马雪[1] CHEN Fang;LU Jiajia;LI Liangfeng;MA Xue(School of Materials and Chemistry,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China;Sichuan Jinhui Energy New Material Co.,Ltd.,Ya’an 625000,Sichuan,China)

机构地区：[1]西南科技大学材料与化学学院,四川绵阳621010 [2]四川金汇能新材料股份有限公司,四川雅安625000

出　　处：《西南科技大学学报》2024年第2期40-47,共8页Journal of Southwest University of Science and Technology

基　　金：资阳市科学技术局市级重点研发科技计划(Zykjjsc20-zdyf-2020-02)。

摘　　要：ZnO线性电阻陶瓷是具有较小的阻温系数和非线性系数且耐受能量较大的新型电气元件。以ZnO-B_(2)O_(3)-SiO_(2)(ZBS)玻璃为烧结助剂,采用固相烧结法制得ZnO线性电阻陶瓷,研究了ZBS掺量对ZnO线性电阻陶瓷体系烧结温度、物相组成、微观结构以及电学性能的影响。结果表明:当ZBS玻璃掺杂质量分数为0.5%、烧结温度为1150℃时,ZnO线性电阻陶瓷具有最佳的综合性能,其体积密度为5.070 g/cm^(3),相对密度为95.85%,电阻率为1406.6Ω·cm,非线性系数为1.06,电阻温度系数为3.88×10^(-4)℃^(-1)。ZBS玻璃掺杂烧结工艺实现了ZnO线性电阻在1150℃的低温烧结。ZnO linear resistance ceramics are a new type of electrical components with a minor resistance temperature coefficient and excellent nonlinear coefficient,and large energy tolerance.The ZnO linear resistive ceramics were obtained by solid-phase sintering method,and ZnO-B_(2)O_(3)-SiO_(2)(ZBS)glass was used as the sintering additive to study the effects of its doping on the sintering temperature,physical phase composition,microstructure,and electrical properties of the ZnO linear resistive ceramic system.The results show that under the conditions that the doping mass fraction of ZBS glass is 0.5%and the sintering temperature is 1150℃,the ZnO linear resistive ceramics have the best overall performance,with a bulk density of 5.070 g/cm^(3),a relative density of 95.85%,electrical resistivity of 1406.6Ω·cm,a nonlinear coefficient of minimum 1.06,and the resistance temperature coefficient is 3.88×10^(-4)℃^(-1).The low-temperature sintering of ZnO linear resistors at 1150℃is realized by the ZBS glass-doped sintering process.

关 键 词：ZnO线性电阻陶瓷 ZBS玻璃 微观结构 非线性系数 阻温系数 

分 类 号：TQ174[化学工程—陶瓷工业]