等离子体增强原子层沉积二氧化硅对多晶硅的损伤机理及防范工艺研究  

The Mechanism and the Prevention of Plasma Enhanced Atomic Layer Deposition Induced Polysilicon Damage

作　　者：何亚东 袁刚 李拓[3] 周毅 程晓敏 霍宗亮[1] HE Yadong;YUAN Gang;LI Tuo;ZHOU Yi;CHENG Xiaomin;HUO Zongliang(Yangtze Memory Technologies Co.,Ltd,Wuhan 430078,China;School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China;School of Chemistry and Chemical Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]长江存储科技有限责任公司,武汉430078 [2]华中科技大学集成电路学院,武汉430074 [3]华中科技大学化学与化工学院,武汉430074

出　　处：《真空科学与技术学报》2024年第6期552-558,共7页Chinese Journal of Vacuum Science and Technology

摘　　要：文章通过电子束检测(EBI)手段研究了等离子体增强原子层沉积(PEALD) SiO_(2)过程中硅烷基酰胺类前驱体副产物对多晶硅产生不可逆损伤的机理。提出用单胺基硅烷基酰胺替代多胺基硅烷基酰胺作为前驱体,来减轻对多晶硅材料的损伤。在不损伤多晶硅前提下,进一步研究化学位阻较小的单胺基前驱体二异丙胺硅烷(DIPAS)对反应速率的影响。In this study,electron beam inspection(EBI)was used to investigate the mechanism of irreversible damage caused by by-products of the aminosilane precursors during the deposition of silicon oxide thin films with plasma enhanced atomic layer deposition(PEALD).It is proposed to replace polyamine based aminosilane with monoamine based aminosilane as precursors to reduce the damage to polysilicon materials.The effect of monoamine based diisopropylamine(DIPAS)precursors with small steric hindrance on the reaction rate of PEALD silicon oxide was studied without the damage of polysilicon.

关 键 词：等离子体增强原子层沉积 硅烷基酰胺 氧化硅 二异丙胺硅烷(DIPAS) 

分 类 号：TN305.8[电子电信—物理电子学]