硅基InGaN/GaN多量子阱微盘器件的发光、探测和数据传输  

Light Emission,Detection and Data Transmission in Silicon-based InGaN/GaN Multi-quantum Well Microdisk Device

作　　者：秦飞飞 卢雪瑶 王潇璇 吴佳启 曹越 张蕾 樊学峰 朱刚毅[1] 王永进 QIN Feifei;LU Xueyao;WANG Xiaoxuan;WU Jiaqi;CAO Yue;ZHANG Lei;FAN Xuefeng;ZHU Gangyi;WANG Yongjin(School of Communication and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,China;School of Biological Science and Medical Engineering,Southeast University,Nanjing 210096,China)

机构地区：[1]南京邮电大学通信与信息工程学院,江苏南京210003 [2]东南大学生物科学与医学工程学院,江苏南京210096

出　　处：《发光学报》2024年第6期978-985,共8页Chinese Journal of Luminescence

基　　金：江苏省自然科学青年基金(BK20210593);国家自然科学基金青年基金(62204127)。

摘　　要：光源和探测器的集成可有效促进轻量化和小型化光电系统的发展,InGaN/GaN多量子阱器件中发光与探测共存现象为收发一体芯片的设计提供了可能。本文采用标准半导体工艺制备了硅片上集成的圆盘形InGaN/GaN多量子阱阵列器件,并对其发光、探测以及基本通信特性进行了研究。微盘型器件中的共振模式有助于提升其探测特性,同时各向同性的辐射特性有助于器件作为光源时与探测器在空间上的耦合。作为光源,该器件的开启电压为2.5 V,中心波长455 nm,-3 dB带宽为5.4 MHz。作为探测器,该器件对紫外到蓝光波段的光有响应,探测性能随波长增加而减弱,截止波长450 nm。在365 nm光源激发下,该器件具有最高开关比7.2×10^(4),下降沿时间为0.41 ms。同时,基于单个微盘器件,本文构建并演示了半双工通信系统,在不同频段实现数据传输。这项研究对于电驱动光源制备以及收发一体的光通信具有重要意义。The integration of light source and detector can effectively promote the development of lightweight and miniaturized photoelectricity systems.The coexistence of emission and detection in InGaN/GaN multi-quantum well(MQW)light emitting diode devices provides a possibility for the design of transceiver integrated devices.In this paper,InGaN/GaN MQW microdisk array integrated on silicon wafers were fabricated using standard semiconductor processes,and their emission,detection,and basic communication characteristics were studied.The resonance mode in the microdisk device helps to improve its detection characteristics,while the isotropic radiation characteristics help the device as a light source and the detector in space coupling.As a light source,the device operates at 2.5 V with an emission wavelength at 455 nm and a-3 dB bandwidth reaching 5.4 MHz.As a detector,the device is responsive to light in the ultraviolet to blue band,and the detection performance decreases with increasing wavelength with a cutoff wavelength of 450 nm.Under excitation at 365 nm,the device exhibits a switch ratio of 7.2×10^(4) with a fall time as short as 0.41 ms.Additionally,we constructed and demonstrated a half-duplex communication system based on a single device that achieved data transmission in different frequency bands.This research is of great significance for the preparation of electrically driven light source and the optical communication of transceiver integration.

关 键 词：硅基InGaN/GaN 多量子阱器件 发光与探测 半双工通信 

分 类 号：O482.31[理学—固体物理]