Effects of spot size on the operation mode of Ga As photoconductive semiconductor switch employing extrinsic photoconductivity  

作　　者：韦金红 李嵩 陈红 曾凡正 贾成林 付泽斌 葛行军 钱宝良 Jinhong WEI;Song LI;Hong CHEN;Fanzheng ZENG;Chenglin JIA;Zebin FU;Xingjun GE;Baoliang QIAN(College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,People’s Republic of China)

机构地区：[1]College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,People’s Republic of China

出　　处：《Plasma Science and Technology》2024年第5期91-99,共9页等离子体科学和技术（英文版）

基　　金：supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030);in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。

摘　　要：To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.

关 键 词：GaAs PCSS operation mode spot size on-state performances two-channel model domain evolution 

分 类 号：TM564[电气工程—电器]