基于大厚度六方氮化硼中子探测器的制备  

Neutron Detectors Based on Large-Thickness Hexagonal Boron Nitrides

作　　者：刘敬润 曹炎 刘晓航 范盛达 王帅 陈曦[4] 刘洪涛 刘艳成 赵江滨[3] 何高魁[3] 陈占国[1] LIU Jingrun;CAO Yan;LIU Xiaohang;FAN Shengda;WANG Shuai;CHEN Xi;LIU Hongtao;LIU Yancheng;ZHAO Jiangbin;HE Gaokui;CHEN Zhanguo(State Key Lab.of Integrated Optoelectronics,College of Electronic Science and Engin.,Jilin University,Changchun 130012,CHN;Shanghai Institute of Appl.Phys.,Shanghai 201800,CHN;Dept.of Nuclear Technology and Application,China Institute of Atomic Energy,Beijing 102413,CHN;School of Physics,Changchun University of Science and Technology,Changchun 130022,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN)

机构地区：[1]吉林大学电子科学与工程学院,长春130012 [2]上海应用物理研究所,上海201800 [3]中国原子能科学研究院核技术综合研究所,北京102413 [4]长春理工大学物理学院,长春130022 [5]中国科学院大学,北京100049

出　　处：《半导体光电》2024年第3期415-419,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(62174066,62275098,62304026,20230101343JC).

摘　　要：六方氮化硼是一种中子敏感材料。介绍了使用低压气相化学沉积在1673K下以大约20μm/h的生长速率制备了高质量203μm厚的六方氮化硼。在氮化硼的两侧沉积厚度为100nm的金电极,制备了垂直结构的六方氮化硼中子探测器。该器件的电学性质表明制备的六方氮化硼材料的迁移率寿命的乘积(μτ)为2.8×10^(-6)cm^(2)/V,电阻率为1.5×10^(14)Ω·cm。在850V电压下,该探测器对热中子的探测效率为34.5%,电荷收集效率为60%。In this study,we prepare a high-quality 203μm-thick hexagonal boron nitride(h-BN)(which is neuron-sensitive)using low-pressure chemical vapor deposition at 1673 K,achieving a growth rate of approximately 20μm/h.We fabricate h-BN neutron detectors with vertical structures by depositing 100nm-thick Au electrodes on both sides of h-BN.Our electrical transport measurement results show that the prepared h-BN material possesses a mobility-life product(μτ)and resistivity of 2.8×10^(-6)cm^(2)/V and 1.5×10^(14)Ω·cm,respectively.The neutron detector based on the 203μm-thick h-BN exhibits neutron detection and charge collection efficiencies of 34.5%and 60%,respectively,at 850V when irradiated by thermal neutrons from Am-Be sources.

关 键 词：宽禁带半导体 六方氮化硼 中子探测 低压气相化学沉积 深紫外光电探测器 

分 类 号：TL814[核科学技术—核技术及应用] O571.53[理学—粒子物理与原子核物理] TL816.3[理学—物理]