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作 者:甘茂武 欧张文 GAN Maowu;OU Zhangwen(Mining Branch of Nanjing Baodi Meishan Industry City Development Co.,Ltd.)
出 处:《现代矿业》2024年第5期141-144,共4页Modern Mining
摘 要:梅山矿业为了提高弱磁工序的选别精度,达到提质降硅的目的,针对原矿品质下降的问题,进行了弱磁给矿浓度、磁场强度等优化试验,并对产品粒度进行了筛析。试验结果表明:将弱磁工序给矿浓度降至30%以下,弱磁精矿杂质SiO_(2)含量小于3.97%,在合理区间内;粗选磁场强度优化为36 kA/m,扫选磁场强度优化为160 kA/m,有利于弱磁选提质降杂;优化后获得了产率为45.16%、TFe品位为66.37%、SiO_(2)含量为2.06%的弱磁粗选精矿,以及产率为4.37%、TFe品位为53.04%、SiO_(2)含量为9.84%、TFe回收率为4.96%、SiO_(2)回收率为3.37%的弱磁扫选精矿;弱磁粗选精矿和扫选精矿中+0.25 mm粒级含脉石矿物多,需对+0.25 mm粗粒精矿进行再磨再选,降低铁精矿SiO_(2)含量,以达到提质降硅的目的。In order to improve the separation accuracy of low intensity magnetic process and achieve the purpose of improving quality and reducing silicon in Meishan Mining,aiming at the problem of raw ore quality decline,the optimization test of low intensity magnetic feed concentration and magnetic field strength is carried out,and the product particle size is screened.The test results show that when the feed con⁃centration of the low intensity magnetic process is reduced to less than 30%,the content of SiO_(2) impurity in the low intensity magnetic concentrate is less than 3.97%,which is within a reasonable range.The magnetic field intensity of rough separation is optimized to 36 kA/m,and the magnetic field intensity of scavenging is optimized to 160 kA/m,which is beneficial to the quality improvement and impuri reduction of low intensity magnetic separation.After optimization,lowintensity magnetic roughing concentrate with yield of 45.16%,TFe grade of 66.37% and SiO2 content of 2.06% is obtained,and low intensi magnetic scavenging concen⁃trate with yield of 4.37%,TFe grade of 53.04%,SiO_(2) content of 9.84%,TFe recovery of 4.96% and SiO_(2) re⁃covery of 3.37% is obtained.There are many gangue minerals in the +0.25 mm fraction of the low intensi mag⁃netic roughing concentrate and the scavenging concentrate.It is necessary to regrinding and re-concentra⁃tion the +0.25 mm coarse concentrate to reduce the SiO_(2) content of the iron concentrate,so as to achieve the purpose of improving quality and reducing silicon.
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