基于分离变量法的功率碳化硅器件热场分析  

Thermal Field Analysis of Power Silicon Carbide Devices Based on Separation Variable Method

作　　者：李茂泉 郗珂庆 尹海韬 王志业 贾萍 LI Maoquan;XI Keqing;YIN Haitao;WANG Zhiye;JIA Ping(Xi’an Aerospace Propulsion Testing Technology Research Institute,Xi’an 710025,China)

机构地区：[1]西安航天动力测控技术研究所,西安710025

出　　处：《微电机》2024年第6期30-35,共6页Micromotors

摘　　要：针对电机驱动中SiC MOSFET模块发热及其在自身器件内热量传导问题,分析功耗来源和计算方法,计算功率器件工作时的功耗,建立功率器件热模型,结合模块属性和参数,列出传热方程并确定边界条件,最终得出一种基于分离变量法快速计算功率器件内某点热量的方法。将数值计算结果分别与Icepak中得到的仿真结果和实际工程测量结果对比,验证此计算方法的准确性,为设计阶段功率器件的选型和热量计算提供有效参考和借鉴。Aiming at the heating of SiC MOSFET module in motor drive and its heat conduction in its own device.The source and calculation method of power consumption were analyzed,and the power consumption of the power device was calculated.The thermal model of the power device was established,the heat transfer equation was listed and the boundary conditions were determined according to the model properties and parameters.Finally,a method based on the separation variable method to calculate the heat of a certain point in the power device was presented.The numerical calculation results were compared with the actual process measurement results,and the simulation results obtained in Icepak were also compared to verify the accuracy of the calculation method,which provided an effective reference for the selection of power devices and heat calculation in the design stage.

关 键 词：SiC MOSFET 热损耗 热模型 热量计算 

分 类 号：TP272[自动化与计算机技术—检测技术与自动化装置]