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作 者:薛一凡 王采慧 裴涛 温焕飞 XUE Yifan;WANG Caihui;PEI Tao;WEN Huanfei(Key Laboratory of Instrumental Science and Dynamic Testing,Ministry of Education,School of Instrumentation and Electronics,North University of China,Taiyuan Shanxi 030051,China)
机构地区:[1]中北大学仪器与电子学院仪器科学与动态测试教育部重点实验室,山西太原030051
出 处:《电子显微学报》2024年第3期303-308,共6页Journal of Chinese Electron Microscopy Society
基 金:国家重点研发计划资助项目(No.2022YFC2204101);山西省回国留学人员科研资助项目(No.2021-117).
摘 要:随着芯片制备工艺的不断完善,半导体集成电路朝着小型化、集成化的方向不断发展,给近场微波成像技术带来了新的挑战。本文建立了探针-样品三维电磁耦合模型,并利用有限元数值分析法研究了探针针尖与样品之间的电磁相互作用。在不同探针-样品间距下,对硅基芯片表面结构进行扫描微波成像。成像结果与仿真结果相一致,随着针尖-样品间距的增加,扫描微波测试系统的灵敏度和分辨率降低。对于由原子力显微术结合微波测量技术发展而来的扫描微波显微镜的改进与产业化具有重大意义。With the continuous improvement of chip preparation process,semiconductor integrated circuits are being developed toward miniaturization and integration,which brings new challenges to the near-field microwave imaging technology.In this paper,a probe-sample three-dimensional electromagnetic coupling model was established.The electromagnetic interaction between probe tip and sample was investigated using finite element numerical analysis.Scanning microwave imaging of the surface structure of Si-based chip was performed at different probe-sample spacings.Imaging result were consistent with simulation result.The sensitivity and resolution of the scanning microwave test system decreased as the tip-sample spacing increased.It is of great significance for the improvement and industrialization of scanning microwave microscopy developed from the combination of atomic force microscopy and microwave measurement technology.
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