基于SiC的雷达微波放大器高频电源设计  

Design of High Frequency Power Supply for Radar Microwave Amplifier Based on SiC

作　　者：李楠 LI Nan(AVIC Leihua Electronic Technology Research Institute,Wuxi 214100)

机构地区：[1]中航工业雷华电子技术研究所,无锡214100

出　　处：《舰船电子工程》2024年第4期71-75,共5页Ship Electronic Engineering

摘　　要：论文介绍了一种利用3.3 kV碳化硅(SiC)MOSFET和肖特基二极管实现22 Vdc至2.5 kVdc宽电压的1 kW电源方案。电源为舰船雷达诱饵中的固态微波功率放大器提供能量。高压碳化硅半导体用于在高频下切换高电压,且不需要串联转换器。为了消除开关损耗和最小化噪声,采用半桥零电压开关ZVS拓扑。还给出隔离栅极驱动和2.5 kV启动的注入解决方案。经过器件特性分析、电路设计封装和台式实验,证明高压SiC-MOSFET和肖特基二极管的组合是该应用中实现高频、高功率密度转换的有效技术。This paper introduces a 1 kW power supply that utilizes 3.3 kV silicon carbide(SiC)MOSFETs and Schottky di⁃odes to achieve a wide voltage range of 22 Vdc to 2.5 kVdc.The power supply provides power to the solid-state microwave power am⁃plifier in the ship's radar decoy.High voltage silicon carbide semiconductors are used to switch high voltages at high frequencies without the need for input series connections of devices or converters.In order to eliminate switching losses and minimize noise,a half bridge ZVS topology is adopted,including device characteristics,circuit design,packaging,and desktop experimental results.Injection solutions for isolated gate drive and 2.5 kV startup are introduced.Through device characteristic analysis,circuit design packaging,and desktop experiments,it has been proven that the combination of high-voltage SiC-MOSFET and Schottky diode is an effective technology for achieving high-frequency and high power density conversion in this application.

关 键 词：碳化硅场效应管 微波功率放大器 高频电源 

分 类 号：TN95[电子电信—信号与信息处理]