C离子对AlGaAs/InGaAs异质结的辐照影响  

Effect of C Ion Irradiation on AlGaAs/InGaAs Heterojunction

作　　者：王海丽 杨梦婕 马晓龙 许坤[1] 段向阳 王献立 WANG Haili;YANG Mengjie;MA Xiaolong;XU Kun;DUAN Xiangyang;WANG Xianli(Zhengzhou University of Aeronautics,Zhengzhou 450046,China)

机构地区：[1]郑州航空工业管理学院,河南郑州450046

出　　处：《郑州航空工业管理学院学报》2024年第4期66-71,共6页Journal of Zhengzhou University of Aeronautics

基　　金：河南高校重点科研项目基础研究专项计划(22ZX012);河南省重点研发与推广专项(科技攻关)(232102230130);基于微纳结构的1178nm半导体激光高效泵源关键技术研究(232102210179)。

摘　　要：基于SRIM软件计算了不同能量的C离子在AlGaAs/InGaAs异质结中的平均投影射程和辐照损伤区,仿真了能量为500keV、800keV、1100keV的C离子入射到AlGaAs/InGaAs异质结中的能量损失情况,发现随着入射离子能量的增加,电离能比例增加,非电离能比例降低,入射离子产生的电离能损远大于反冲原子产生的电离能损,反冲原子产生的声子能损远多于入射离子产生的声子能损;通过仿真还发现,当C离子的能量为800keV时,辐照损伤区在异质结处且在异质结处产生的空位缺陷最多。In this paper,the damage caused by C ion irradiation on AlGaAs/InGaAs heterojunction was investigated.The projection ranges of C ions and irradiation damage area with varying energies in the AlGaAs/InGaAs heterojunc-tion were calculated by SRIM.In addition,the energy loss caused by 500keV,800keV,and 1100keV C ions incident on the basic structure of AlGaAs/InGaAs heterojunction was also simulated.It was observed that with the increase of incident ion energy,the proportion of ionizing energy loss increases,while the proportion of non-ionizing energy loss decreases,and the ionizing energy loss induced is mainly comes from incident ion rather than recoil atom,while the phonon energy loss mainly comes from recoil atom rather than incident ion.Additionally,it was found that when us-ing 800keV energy for C ions,the irradiation damage area is the heterojunction,and a higher number of vacancy de-fects are generated.

关 键 词：C离子辐照 AlGaAs/InGaAs异质结 电离能损 非电离能损 空位 

分 类 号：TN304.2[电子电信—物理电子学]