High-precision X-ray characterization for basic materials in modern high-end integrated circuit  

作　　者：Weiran Zhao Qiuqi Mo Li Zheng Zhongliang Li Xiaowei Zhang Yuehui Yu 

机构地区：[1]National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China [3]Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China [4]Beijing Synchrotron Radiation Facility,Institute of High Energy Physics,Chinese Academy of Science,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第7期12-24,共13页半导体学报（英文版）

基　　金：This work was supported by Youth Innovation Promotion Association CAS,National Natural Science Foundation of China(Grant No.11705263);Shanghai Rising-Star Program(Grant No.21QA1410900)。

摘　　要：Semiconductor materials exemplify humanity's unwavering pursuit of enhanced performance,efficiency,and functionality in electronic devices.From its early iterations to the advanced variants of today,this field has undergone an extraordinary evolution.As the reliability requirements of integrated circuits continue to increase,the industry is placing greater emphasis on the crystal qualities.Consequently,conducting a range of characterization tests on the crystals has become necessary.This paper will examine the correlation between crystal quality,device performance,and production yield,emphasizing the significance of crystal characterization tests and the important role of high-precision synchrotron radiation X-ray topography characterization in semiconductor analysis.Finally,we will cover the specific applications of synchrotron radiation characterization in the development of semiconductor materials.

关 键 词：X-ray topography synchrotron radiation semiconductor materials crystal defects 

分 类 号：TN40[电子电信—微电子学与固体电子学] O434.19[机械工程—光学工程]