Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel  

作　　者：Yuting Chen Xinlv Duan Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao 

机构地区：[1]Beijing Superstring Academy of Memory Technology,Beijing 100176,China [2]State Key Laboratory of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Journal of Semiconductors》2024年第7期40-44,共5页半导体学报（英文版）

基　　金：funded in part by the National Key R&D Program of China(Grant No.2022YFB3606900);in part by the National Natural Science of China(Grant No.62004217)。

摘　　要：In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment.

关 键 词：In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN321.5[电子电信—物理电子学]