Dual-phase coexistence enables to alleviate resistance drift in phase-change films  

作　　者：Tong Wu Chen Chen Jinyi Zhu Guoxiang Wang Shixun Dai 

机构地区：[1]Laboratory of Infrared Materials and Devices,The Research Institute of Advanced Technologies,Ningbo University,Ningbo 315211,China [2]Institute of Ocean Engineering,Ningbo University,Ningbo 315211,China

出　　处：《Journal of Semiconductors》2024年第7期55-59,共5页半导体学报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Grant No.62074089);the Natural Science Foundation of Ningbo City,China(Grant No.2022J072);the Youth Science and Technology Innovation Leading Talent Project of Ningbo City,China(Grant No.2023QL005);sponsored by the K.C.Wong Magna Fund in Ningbo University。

摘　　要：The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

关 键 词：phase change films X-ray methods resistance drift optical band gap 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TP333[自动化与计算机技术—计算机系统结构]