Memristive feature and mechanism induced by laser-doping in defect-free 2D semiconductor materials  

作　　者：Xiaoshan Du Shu Wang Qiaoxuan Zhang Shengyao Chen Fengyou Yang Zhenzhou Liu Zhengwei Fan Lijun Ma Lei Wang Lena Du Zhongchang Wang Cong Wang Bing Chen Qian Liu 

机构地区：[1]College of Electronic and Information Engineering,Shandong University of Science and Technology,Qingdao 266590,China [2]National Center for Nanoscience and Technology&University of Chinese Academy of Sciences,Beijing 100190,China [3]Hebei University of Water Resources and Electric Engineering Electrical Automation Department,Cangzhou 061001,China [4]The MOE Key Laboratory of Weak-Light Nonlinear Photonics and International Sino-Slovenian Join Re-search Center on Liquid Crystal Pho-tonics,TEDA Institute of Applied Physics and School of Physics,Nankai University,Tianjin 300457,China [5]College of Mathematics and Physics,Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory,Qingdao Uni-versity of Science and Technology,Qingdao 266061,China [6]Department of Physics,Capital Normal University,Beijing 100048,China [7]Department of Advanced Materials and Computing,International Iberian Nanotechnology Laboratory(INL),4715-330 Braga,Portugal [8]College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China

出　　处：《Journal of Semiconductors》2024年第7期85-91,共7页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011);the National Key Research and Development Program of China(No.2016YFA0200403);Eu-FP7 Project(No.247644);CAS Strategy Pilot Program(No.XDA 09020300);Fundamental Research Funds for the Central Universities(No.buctrc202122);the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401);the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001);funded by the Ph.D Foundation of Hebei University of Water Resources and Electric Engineering(No.SYBJ2202);Funded by Science and Technology Project of Hebei Education Department(No.BJK2022027)。

摘　　要：Memristors as non-volatile memory devices have gained numerous attentions owing to their advantages in storage,in-memory computing, synaptic applications, etc. In recent years, two-dimensional(2D) materials with moderate defects have been discovered to exist memristive feature. However, it is very difficult to obtain moderate defect degree in 2D materials, and studied on modulation means and mechanism becomes urgent and essential. In this work, we realized memristive feature with a bipolar switching and a configurable on/off ratio in a two-terminal MoS_(2) device(on/off ratio ~100), for the first time, from absent to present using laser-modulation to few-layer defect-free MoS_(2)(about 10 layers), and its retention time in both high resistance state and low resistance state can reach 2×10^(4) s. The mechanism of the laser-induced memristive feature has been cleared by dynamic Monte Carlo simulations and first-principles calculations. Furthermore, we verified the universality of the laser-modulation by investigating other 2D materials of TMDs. Our work will open a route to modulate and optimize the performance of 2D semiconductor memristive devices.

关 键 词：2D-material memristor laser doping laser direct writing memristive mechanism 

分 类 号：TN60[电子电信—电路与系统] TB34[一般工业技术—材料科学与工程]