热电子诱导穿透对pMOSFET的影响  

Eff ect of Hot Electron Induced Punchthrough on pMOSFET

作　　者：任康 丁俊贤 贡佳伟 王磊[1] 李广[1] Ren Kang;Ding Junxian;Gong Jiawei;Wang Lei;Li Guang(Anhui University,Anhui,230601)

机构地区：[1]安徽大学,安徽230601

出　　处：《当代化工研究》2024年第13期43-45,共3页Modern Chemical Research

摘　　要：随着晶体管尺寸的不断减小,由于热电子诱导穿透(HEIP)而引起的pMOSFET器件可靠性退化问题,一直是深亚微米器件研究的热点,老化(Burn in)实验作为高温测试中的一个不可避免的环节,用以保证器件的可靠性,HEIP效应会影响老化实验中的累积良率。本文通过改善SiN和STI(浅槽隔离)的侧壁氧化物界面态的实验,研究工艺过程对HEIP寿命时间的影响,得出可以通过优化工艺过程来提高HEIP效应的寿命时间。With the continuous reduction of transistor size,the reliability degradation of pMOSFET devices caused by thermionic induced penetration(HEIP)has been a hot topic in the research of deep submicron devices.Burn in experiment is an inevitable part of high temperature test to ensure the reliability of devices.HEIP effect can affect the cumulative yield in aging experiments.In this paper,the influence of the process on the HEIP life time was studied by improving the interface state of SiN and STI(shallow groove isolation),and it was concluded that the life time of HEIP effect could be improved by optimizing the process.

关 键 词：热电子诱导穿透 可靠性 寿命时间 

分 类 号：TN432[电子电信—微电子学与固体电子学]