等离子体增强化学气相沉积设备的技术要点及性能分析  

Technical Points and Performance Analysis of Plasma-Enhanced Chemical Vapor Deposition Equipment

作　　者：任想想 Ren Xiangxiang(Zhejiang Lihui Intelligent Equipment Co.,Ltd.,Lishui,Zhejiang 323000,CHN)

机构地区：[1]浙江丽晖智能装备有限公司,浙江丽水323000

出　　处：《模具制造》2024年第7期150-152,共3页Die & Mould Manufacture

摘　　要：等离子体增强化学气相沉积(PECVD)是一种重要的表面涂覆技术,可用于制备薄膜材料。对此,需要研究并分析等离子体增强化学气相沉积设备的技术要点和性能,介绍PECVD设备的基本构成和工作原理,研究PECVD设备的关键技术要点。其中,气体供给系统的精确控制是实现均匀沉积薄膜的关键。为了提高沉积速率和薄膜质量,需优化反应室的设计以确保等离子体的均匀分布和稳定性。此外,射频电源的功率和频率的选择也对薄膜质量有重要影响。实践证明,通过研究技术要点和性能分析,可进一步优化设备参数,提高薄膜质量和沉积效率,为相关领域研究提供有力支持。Plasma-enhanced chemical vapor deposition(PECVD)is an important surface coating technology,which can be used to prepare thin film materials.In this regard,it is necessary to study and analyze the technical points and performance of plasma enhanced chemical vapor deposition equipment,introduce the basic composition and working principle of PECVD equipment,and study the key technical points of PECVD equipment.Precise control of the gas supply system is the key to achieving uniform deposition of thin films.In order to improve the deposition rate and film quality,the design of the reaction chamber needs to be optimized to ensure uniform plasma distribution and stability.In addition,the choice of power and frequency of the RF power supply also has a significant impact on the quality of the film.It has been proved in practice that through the study of technical points and performance analysis,the equipment parameters can be further optimized,the film quality and deposition efficiency can be improved,and the research in related fields can be strongly supported.

关 键 词：等离子体 化学气相沉积设备 技术要点 性能分析 

分 类 号：TH6[机械工程—机械制造及自动化]