TMDs阻变存储器微观机理研究综述  

Review on the Microscopic Mechanism of TMDs Resistive Emory

作　　者：李肖敏 刘翠霞[1] LI Xiao-min;LIU Cui-xia(Xi'an Technological University,Shaanxi Xi'an 710021,China)

机构地区：[1]西安工业大学,陕西西安710021

出　　处：《广州化工》2024年第8期15-17,共3页GuangZhou Chemical Industry

基　　金：陕西省科技厅自然科学研究计划项目(No:2021JM-430)。

摘　　要：过渡金属硫族化合物(TMDs)阻变存储器具有简单的金属-介质层-金属三明治结构,且功耗低、可缩性好。分析TMDs阻变存储器阻变机理和导电细丝形成特性,为明确阻变存储器机理模拟研究重点提供理论基础。总结分析了国内外存储层TMDs的范德华层间空隙半径、掺杂和缺陷状况与器件性能之间的关系,展望了TMDs阻变存储器的发展趋势和应用前景,为TMDs阻变存储器技术攻关提供支撑。Transition metal dichalcogenides(TMDs)resistive memory has a simple metal-dielectric-metal sandwich structure with low power consumption and good scalability.The resistive switching mechanism and conductive filament formation characteristics of TMDs resistive memory are analyzed,which serves as a theoretical basis for clarifying the simulation research focus of resistive memory mechanism.The relationship between the van der Waals interlayer gap radius,doping and defect conditions of storage layer TMDs and device performance at home and abroad were summarized and analyzed.The development trend and application prospect of TMDs resistive memory was prospected,which provided support for TMDs resistive memory technology research.

关 键 词：TMDs材料 阻变存储器 第一性原理 

分 类 号：TN304[电子电信—物理电子学]