四方-正交相界处的PLZST反铁电陶瓷电性能研究  

Study on electrical properties of PLZST antiferroelectric ceramics at tetragonal⁃quadrature phase boundary

作　　者：申震 夏翔 李怡 李荣 杨晓禹 程英晔 史秀梅 SHEN Zhen;XIA Xiang;LI Yi;LI Rong;YANG Xiaoyu;CHENG Yingye;SHI Xiumei(Inner Mongolia Metal Material Research Institute,Ningbo 315103,China)

机构地区：[1]内蒙金属材料研究所,浙江宁波315103

出　　处：《兵器材料科学与工程》2024年第4期97-103,共7页Ordnance Material Science and Engineering

摘　　要：采用固相法烧结制备(Pb_(0.97)La_(0.02))(Zr_(y)Sn_(1-x-y)Ti_(x))O_(3)反铁电陶瓷样品(x=0.01,0.03,0.05,0.07;y值沿La^(3+)掺杂PZST三元相图反铁电相界处取得),系统研究了B位不同Ti含量对PLZST体系反铁电陶瓷结构、微观形貌、铁电、介电特性的影响。结果表明:该体系PLZST反铁电陶瓷为简单钙钛矿(ABO_(3))结构;且随Ti含量增加,其晶粒尺寸、陶瓷致密度均增大,材料最大极化强度相应提高,同时耐击穿电场强度有所降低;在B位Ti的质量分数为5%时储能特性最佳(W_(re)=1.7 J/cm^(3),η=90.14%);同时,该系列陶瓷具有良好的介电温度稳定性(350℃时介电损耗低于5%)和介电频率稳定性(测试频率在1MHz时介电常数变化率约为10%)。The sample of (Pb_(0.97)La_(0.02))(Zr_(y)Sn_(1-x-y)Ti_(x))O_(3) antiferroelectric ceramics(x=0.01,0.03,0.05,0.07,and y values were obtained along the antiferroelectric phase boundary in the ternary phase diagram of La^(3+)doped PZST)were prepared by solid⁃state sintering process.The influence of different Ti contents at the B site on the structure,micromorphology,ferroelectric and dielectric properties of the PLZST antiferroelectric ceramics was systematically studied.The results show that the PLZST antiferroelectric ceramic of the system is a simple perovskite(ABO_(3))structure.With the increase of Ti content,the grain size and ceramic density increase,the maximum polarization strength of the material increases correspondingly,and the breakdown electric field strength decreases.When the mass fraction of Ti at B position is 5%,the energy storage characteristics are the best(W_(re)=1.7 J/cm^(3),η=90.14%).At the same time,this series of ceramics has good dielectric temperature stability(dielectric loss is less than 5%at 350℃)and dielectric frequency stability(the dielectric constant change rate is about 10%when the test frequency is 1 MHz).

关 键 词：电子陶瓷 PLZST 组分调节 反铁电体 

分 类 号：TM282[一般工业技术—材料科学与工程]