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作 者:王增双 朱大成 郝晓超 高晓强 WANG Zengshuang;ZHU Dacheng;HAO Xiaochao;GAO Xiaoqiang(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
机构地区:[1]中国电子科技集团公司第十三研究所,河北石家庄050051
出 处:《电声技术》2024年第5期134-136,142,共4页Audio Engineering
摘 要:利用GaAs异质结双极晶体管(Heterojunction Bipolar Transistor,HBT)工艺设计一款宽带二分频器。首先,基于发射极耦合逻辑(Emitter Coupled Logic,ECL)结构的锁存器,提出一种能够提高分频器工作频率和带宽的D触发器结构。其次,从分频器的自谐振频率、输入灵敏度曲线、输入信号质量等方面分析分频器的工作条件。最后,进行测试分析。测试结果表明:在电源电压为5 V时,该二分频器电流为75 mA,输入频率为2~20 GHz,在3~17 GHz的输入灵敏度为-10~10 dBm,输出功率为-3 dBm。A broadband divide-by-2 frequency divider was designed using GaAs Heterojunction Bipolar Transistor(HBT)technology.Firstly,based on the Emitter Coupled Logic(ECL)structure of the latch,a D-flip-flop structure is proposed that can improve the operating frequency and bandwidth of the frequency divider.Secondly,analyze the working conditions of the frequency divider from the aspects of its self resonant frequency,input sensitivity curve,and input signal quality.Finally,conduct testing analysis.The test results show that under the condition of a power supply voltage of 5 V,the current of the divider is 75 mA,the input frequency is 2~20 GHz,the input sensitivity is-10~10 dBm within 3~17 GHz,and the output power is-3 dBm.
分 类 号:TN851[电子电信—信息与通信工程]
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