机构地区:[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China [2]School of Integrated Circuits,Interdisciplinary Research Center forFuture Intelligent Chips Chip-X,Nanjing University,Suzhou 215163,China [3]School of Integrated Circuit Science and Engineering,NanjingUniversity of Posts and Telecommunications,Nanjing 210003,China [4]State Key Laboratory of Infrared Physics,Shanghai Institute ofTechnical Physics Chinese Academy of Sciences,Shanghai 200083,China [5]School of Physics and Key Lab of Quantum Materials and Devices of theMinistry of Education,School of Electronic Science Engineering,Southeast University,Nanjing 211189,China [6]College of Integrated Circuits,State Key Laboratory of Silicon andAdvanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China [7]Suzhou Laboratory,Suzhou 215004,China [8]State Key Laboratory of Integrated Chips and Systems,School ofMicroelectronics,Fudan University,Shanghai 200433,China [9]Shaoxin Laboratory,Shaoxing 312000,China [10]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China [11]Key Laboratory for Micro-Nano Physics and Technology of HunanProvince,College of Materials Science and Engineering,Hunan University,Changsha 410082,China [12]College of Integrated Circuits,Zhejiang University,Hangzhou 311200,China [13]Shenzhen Geim Graphene Center,Shenzhen Key Laboratory of LayeredMaterials for Value-Added Applications,Tsinghua-Berkeley Shenzhen InstituteInstitute of Materials Research,Tsinghua Shenzhen InternationalGraduate School,Tsinghua University,Shenzhen 518055,China [14]State Key Laboratory of Extreme Photonics and Instrumentation,College of Optical Science and Engineering,International Research Centerfor Advanced Photonics,Zijingang Campus,Zhejiang University,Hangzhou 310058,China [15]National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,ChineseAcademy of Sciences,Shanghai 200050,China [16]CAS Key Laboratory of Nanophotonic Mater
出 处:《Science China(Information Sciences)》2024年第6期1-147,共147页中国科学(信息科学)(英文版)
基 金:support of the National Natural Science Foundation of China and the Ministry of Science and Technology of the People’s Republic of China;funds and projects for the development of 2D information materials。
摘 要:Over the past 70 years,the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials.Two-dimensional(2D)materials like transition metal dichalcogenides(TMDs)and graphene are pivotal in overcoming the limitations of silicon-based technologies,offering innovative approaches in transistor design and functionality,enabling atomic-thin channel transistors and monolithic 3D integration.We review the important progress in the application of 2D materials in future information technology,focusing in particular on microelectronics and optoelectronics.We comprehensively summarize the key advancements across material production,characterization metrology,electronic devices,optoelectronic devices,and heterogeneous integration on silicon.A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined.To facilitate such a transition,key technologies and tools dedicated to 2D materials must be developed to meet industrial standards,and the employment of AI in material growth,characterizations,and circuit design will be essential.It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.
关 键 词:two-dimensional(2D)materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration
分 类 号:TB34[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]
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