Progress on the program of Si-compatible two-dimensional semiconductor materials and devices  

作　　者：Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG 

机构地区：[1]College of Integrated Circuits,State Key Laboratory of Silicon andAdvanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China [2]School of Materials Science and Engineering,State Key Laboratory ofSilicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China

出　　处：《Science China(Information Sciences)》2024年第6期148-167,共20页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.62090030/62090031,62274145);the Fund of China Scholarship Council(CSC)。

摘　　要：Two-dimensional(2D)materials are at the forefront of innovation,heralding a new era for nextgeneration electronics and optoelectronics.These materials are distinguished by their unique structural characteristics:they have no hanging bonds on their surface,exhibit weakened electrostatic shielding in the Z-direction,and boast atomic thickness in their monolayers.These features have led to groundbreaking discoveries in electrical,optical,and magnetic properties,paving the way for advancements in low-power electronics,valleytronics,infrared detectors,and memory devices.Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration.In response to this ongoing evolution,the National Natural Science Foundation of China(NSFC)initiated a major program in 2021 dubbed“Si-compatible two-dimensional semiconductor materials and devices”.This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions.Additionally,it sheds light on the challenges that researchers in the 2D domain face,particularly in developing Si-compatible 2D technologies.

关 键 词：two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration LOW-POWER 

分 类 号：TN303[电子电信—物理电子学]