Contact engineering for temperature stability improvement of Bi-contacted MoS_(2)field effect transistors  

作　　者：Zizheng LIU Qing ZHANG Xiaohe HUANG Chunsen LIU Peng ZHOU 

机构地区：[1]State Key Laboratory of Integrated Chip and Systems,School of Microelectronics,Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 2004330,China [2]Frontier Institute of Chip and System,Shanghai Key Lab for Future Computing Hardware and System,Fudan University,Shanghai 200438,China [3]Shaoxin Laboratory,Shaoxing 312000,China

出　　处：《Science China(Information Sciences)》2024年第6期168-175,共8页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.61925402,62090032,62004040);National Key Research and Development Program(Grant No.2021YFA1200500);Innovation Program of Shanghai Municipal Education Commission(Grant No.2021-01-07-00-07-E00077);Science and Technology Commission of Shanghai Municipality(Grant No.19JC1416600);Shanghai Pilot Program for Basic Research–Fudan University(Grant No.21TQ1400100(21TQ011));Shanghai Rising-Star Program(Grant No.22QA1400700);the Young Scientist Project of MOE Innovation Platform。

摘　　要：Semimetallic bismuth(Bi)is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors(FETs).However,the low melting point of Bi contact(271.5℃)limits its reliable applications.In this study,we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony(Sb)between the Bi contacting layer and the gold(Au)capping layer.The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process(Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃).Because of the improved contacting layer formed by the semimetal Bi/Sb alloy,the fabricated Bi/Sb/Au-contacted molybdenum sulfide(MoS_(2))FETs with different gate lengths demonstrated higher on-state current stability after heating treatment than the Bi/Au contact.Because of the Bi/Sb/Au contact and poly(methyl methacrylate)package,the MoS_(2)FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics.The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

关 键 词：temperature stability semimetallic bismuth contact semimetallic antimony contact MoS_(2)FETs time stability 

分 类 号：TN386[电子电信—物理电子学]