Highly responsive broadband Si-based MoS_(2)phototransistor on high-k dielectric  

作　　者：Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG 

机构地区：[1]College of Integrated Circuits,State Key Laboratory of Silicon andAdvanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China [2]ZJU-Hangzhou Global Scientific and Technological Innovation Centre,Hangzhou 311200,China [3]School of Materials Science and Engineering,State Key Laboratory ofSilicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China [4]Beijing Key Lab of Nanophotonics and Ultrafine OptoelectronicSystems,School of Physics,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Science China(Information Sciences)》2024年第6期176-185,共10页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.62090030,62090031,62274145);Natural Science Foundation of Zhejiang Province,China(Grant No.LZ20F040001);National Key R&D Program of China(Grant No.2021YFA1200502);Fund of China Scholarship Council(CSC)。

摘　　要：The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical,security surveillance,robotics,automotive,quality control,image recognition,and military applications,due to their superior quality,broadband detection,lower noise,and economic viability.Here,we report a MoS_(2)channel-based phototransistor over an HfO_(2)/n-Si substrate isolated by an h BN layer.The high photoresponse is achieved through the integration of the photoconduction,photogating,and mobility enhancement process by utilizing excellent features of MoS_(2),HfO_(2)/Si,and h BN.The capacitive coupling of the photogenerated carriers by high-k dielectric HfO_(2)leads to modulation of MoS_(2)Fermi level due to electrostatic doping.Furthermore,the MoS_(2)also contributes to the photogeneration of carriers due to its semiconducting nature,leading to additional photocurrent.Ultimately,the combination of photogating,photoconduction,and swift carrier extraction with remarkable mobility of 11.65 cm^(2)·V^(-1)·s^(-1)results in high responsivity,external quantum efficiency,and detectivity of 4.5×10^(8)A·W-1,0.72×10^(6),and 6.20×10^(16)Jones at 266 nm illumination,respectively.The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths.The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关 键 词：photogating PHOTOCONDUCTION two-dimensional materials high k dielectric carrier scattering PHOTOTRANSISTOR 

分 类 号：TN32[电子电信—物理电子学]