Hole mobility enhancement in monolayer WSe_(2)p-type transistors through molecular doping  

作　　者：Shiyuan LIU Xiong XIONG Xin WANG Xinhang SHI Ru HUANG Yanqing WU 

机构地区：[1]School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits,Peking University,Beijing 100871,China [2]Wuhan National High Magnetic Field Center and School of Integrated Circuits,Huazhong University of Scienceprotectand Technology,Wuhan 430074,China

出　　处：《Science China(Information Sciences)》2024年第6期203-209,共7页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.61927901,62090034,62104012);National Key Research and Development Program of China(Grant Nos.2022YFB4400102,2021YFA1202903);Beijing Natural Science Foundation(Grant No.4242057);Technology Innovation Program of Hunan Province(Grant No.2021RC5008)。

摘　　要：Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor(CMOS)devices at ultimate scaling.However,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide(WSe_(2))p-type transistors,especially monolayer chemical vapor deposition(CVD)-grown WSe_(2),have not met expectations.In this paper,an effective performance enhancement of monolayer WSe_(2)p-type transistor was achieved through a molecular doping strategy.Synthesizing monolayer WSe_(2)directly on SiO_(2)back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate(4-NBD)molecular dopant with a concentration of 10 m M was utilized to modulate the Fermi level position of monolayer WSe_(2)for hole doping.The devices demonstrated a more than 98%increase in hole mobility,reaching up to 97 cm^(2)·V^(-1)·s^(-1)while maintaining the current on/off ratio of 108.Monolayer p-type WSe_(2)transistors with 1μm channel length exhibit a high drive current surpassing 176μA·μm^(-1),exceeding previous CVD-WSe_(2)devices with similar channel length.This straightforward and effective approach to improving the electrical performance of WSe_(2)transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.

关 键 词：CVD-grown WSe_(2) molecular doping 4-NBD p-type transistors hole mobility 

分 类 号：TN32[电子电信—物理电子学]